Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a conformal spacer adjacent to a gate electrode structure

Method of forming a conformal spacer adjacent to a gate electrode structure

US Patent 7064071 · Granted Jun 20, 2006

Estimated economic value: $7,818,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wall construction and component for the same2014
SOI device with a buried insulating material having increased etch resistivity2013
Methods of forming efuse devices2013
Electronic fuse structure formed using a metal gate electrode material stack con2013
Semiconductor device comprising a silicon/germanium resistor2012
Semiconductor device comprising isolation trenches inducing different types of s2012
Method of creating a strained channel region in a transistor by deep implantatio2012
Method for patterning contact etch stop layers by using a planarization process2010
Technique for forming contact insulation layers and silicide regions with differ2010
Semiconductor device including a vertical decoupling capacitor2010
Method of increasing transistor drive current by recessing an isolation trench2010
Field effect transistor having a stressed dielectric layer based on an enhanced 2009