Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Technique for forming contact insulation layers and silicide regions with different characteristics

Technique for forming contact insulation layers and silicide regions with different characteristics

US Patent 7838359 · Granted Nov 23, 2010

Estimated economic value: $5,148,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Recommendation non-transitory computer-readable medium, method, and system for m2024
Method for controlling a hydrodynamic machine and hydrodynamic machine2023
Edge configuration of software systems for manufacturing2020
Emerging issue detection and analysis2020
Semiconductor device comprising a die seal including long via lines2020
Semiconductor device comprising a die seal including long via lines2018
Metal line layout based on line shifting2018
Method of forming a semiconductor device and according semiconductor device2017
Semiconductor device comprising contact structures with protection layers formed2017
Self service propagation of custom extension fields into web services2016
Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for 2016
Semiconductor device including a stress buffer material formed above a low-k met2016