Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making a semiconductor device comprising isolation trenches inducing different types of strain

Method of making a semiconductor device comprising isolation trenches inducing different types of strain

US Patent 7547610 · Granted Jun 16, 2009

Estimated economic value: $16,459,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

IC structure with MFMIS memory cell and CMOS transistor2025
Structures for a field-effect transistor that include a spacer structure2025
Variable-speed drive for single-phase asynchronous motors2025
Structures for a ferroelectric field-effect transistor and related methods2024
Structure including a cross-bar router and method2024
Transistor with phase transition material region between channel region and each2022
FDSOI channel control by implanted high-k buried oxide2020
Three-dimensional transistor with improved channel mobility2019
Transistor element including a buried insulating layer having enhanced functiona2019
Communicating optical signals between stacked dies2019
Flash memory device2019
Ferro-FET device with buried buffer/ferroelectric layer stack2018