Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for enhancing shallow trench top corner rounding using endpoint control of nitride layer etch process with appropriate etch front

Method for enhancing shallow trench top corner rounding using endpoint control of nitride layer etch process with appropriate etch front

US Patent 6579801 · Granted Jun 17, 2003

Estimated economic value: $2,827,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wall construction and component for the same2014
System integration for feasibility display2014
Mask for forming integrated circuit2014
SOI device with a buried insulating material having increased etch resistivity2013
Methods of forming efuse devices2013
Electronic fuse structure formed using a metal gate electrode material stack con2013
Systems and methods that control liquid temperature in immersion lithography to 2013
Semiconductor device comprising a silicon/germanium resistor2012
Semiconductor device comprising isolation trenches inducing different types of s2012
Method of creating a strained channel region in a transistor by deep implantatio2012
System and method for imprint lithography to facilitate dual damascene integrati2011
Methods for forming small contacts2011