Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a thin oxide layer having improved reliability on a semiconductor surface

Method of forming a thin oxide layer having improved reliability on a semiconductor surface

US Patent 6900111 · Granted May 31, 2005

Estimated economic value: $6,268,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Superior integrity of a high-K gate stack by forming a controlled undercut on th2015
Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticate2013
Enhanced etch stop capability during patterning of silicon nitride including lay2012
Drive current adjustment for transistors by local gate engineering2012
Etch stop layer of reduced thickness for patterning a dielectric material in a c2012
Method for reducing defects of gate of CMOS devices during cleaning processes by2011
Gate dielectrics of different thickness in PMOS and NMOS transistors2011
Method for manufacturing semiconductor device comprising SOI transistors and bul2011
Method for encapsulating a high-K gate stack by forming a liner at two different2011
Technique for locally adapting transistor characteristics by using advanced lase2010
Field effect transistor having a doped gate electrode with reduced gate depletio2009
CMOS gate structure comprising predoped semiconductor gate material with improve2008