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Semiconductor structure including a ferroelectric transistor and method for the formation thereof |
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Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistor |
Gunter Grasshoff |
2016-08-09 |
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Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereof |
Igor Lusetsky |
2016-06-14 |
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Semiconductor structure including a ferroelectric transistor and method for the formation thereof |
Jongsin Yun, Seunghwan Seo, Joerg Schmid |
2016-03-22 |
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Drain/source extension structure of a field effect transistor with reduced boron diffusion |
Ekkehard Pruefer, Klaus Hempel, Stephan Kruegel |
2014-04-15 |
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Method of improving memory cell device by ion implantation |
Nihar-Ranjan Mohapatra |
2013-04-30 |
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Trench isolation structure having different stress |
Klaus Hempel, Roland Stejskal |
2012-04-17 |
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Transistor having a channel with biaxial strain induced by silicon/germanium in the gate electrode |
Andreas Gehring, Markus Lenski |
2010-07-13 |
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Method for reducing silicide defects by removing contaminants prior to drain/source activation |
Markus Lenski, Ekkehard Pruefer |
2009-05-05 |
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Technique for forming transistors having raised drain and source regions with different heights |
Scott Luning, Thorsten Kammler |
2007-02-13 |
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Technique for forming a transistor having raised drain and source regions with a reduced number of process steps |
Scott Luning, Thorsten Kammler |
2006-12-05 |
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Advanced technique for forming a transistor having raised drain and source regions |
Scott Luning, Andy Wei |
2006-11-21 |
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Technique for forming contacts for buried doped regions in a semiconductor device |
Manfred Horstmann |
2006-06-20 |
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Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding |
Stephan Kruegel, Gert Burbach |
2005-09-13 |
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Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions |
Bin Yu |
2004-09-07 |
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SOI MOSFET with asymmetrical source/body and drain/body junctions |
Bin Yu |
2004-08-10 |
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Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simox |
— |
2003-04-15 |
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Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture |
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2002-12-17 |
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SOI MOSFET with graded source/drain silicide |
Bin Yu |
2002-10-15 |