Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture

Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture

US Patent 6495402 · Granted Dec 17, 2002

Estimated economic value: $3,175,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for grant free uplink transmission, user equipment and base station devic2025
Method and device for uplink power control2025
Configuring physical resources for interference cancellation2025
Apparatus and method for determining timing relationship in wireless communicati2025
Method and device for determining timing information2025
Method, user equipment and base station for transmitting HARQ-ACK information2025
Method and apparatus for signal processing in a wireless communication system2025
Adapter having socket body2025
Methods and apparatuses for seismic characterization of subsurface formations2025
1H-[1, 2, 3]triazolo[4, 5-h] quinazoline compounds acting as protein kinase inhi2025
Power headroom report, configuring, power control, and data transmission method,2025
Method and apparatus for random access2025