Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simox

Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simox

US Patent 6548369 · Granted Apr 15, 2003

Estimated economic value: $2,272,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure including a ferroelectric transistor and method for the 2017
Method of forming a semiconductor structure including a ferroelectric material a2016
Semiconductor structure including a split gate nonvolatile memory cell and a hig2016
Semiconductor structure including a ferroelectric transistor and method for the 2016
Drain/source extension structure of a field effect transistor with reduced boron2014
Method of improving memory cell device by ion implantation2013
Trench isolation structure having different stress2012
Transistor having a channel with biaxial strain induced by silicon/germanium in 2010
Method for reducing silicide defects by removing contaminants prior to drain/sou2009
Technique for forming transistors having raised drain and source regions with di2007
Technique for forming a transistor having raised drain and source regions with a2006
Advanced technique for forming a transistor having raised drain and source regio2006