Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistor with an improved gate contact and method of fabricating the same

Field effect transistor with an improved gate contact and method of fabricating the same

US Patent 6566718 · Granted May 20, 2003

Estimated economic value: $2,116,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Variable-speed drive for single-phase asynchronous motors2025
Methods of reducing material loss in isolation structures by introducing inert a2014
Semiconductor device comprising replacement gate electrode structures and self-a2014
Temperature monitoring in a semiconductor device by using a PN junction based on2014
High-k metal gate electrode structure formed by removing a work function on side2014
Method for making high-K metal gate electrode structures by separate removal of 2014
Drain/source extension structure of a field effect transistor with reduced boron2014
Method of forming a field effect transistor2013
Semiconductor device comprising a metal gate stack of reduced height and method 2012
Enhancing transistor characteristics by a late deep implantation in combination 2012
Enhancing transistor characteristics by a late deep implantation in combination 2012
Technique for providing stress sources in transistors in close proximity to a ch2012