WZ

Wei Zhao

ST Sandisk Technologies: 39 patents #61 of 2,224Top 3%
TSMC: 20 patents #1,647 of 12,232Top 15%
GU Globalfoundries U.S.: 3 patents #166 of 665Top 25%
WT Western Digital Technologies: 2 patents #1,273 of 3,180Top 45%
SU Southeast University: 1 patents #257 of 873Top 30%
NU National Tsing Hua University: 1 patents #672 of 2,036Top 35%
Disney: 1 patents #3,944 of 6,686Top 60%
Overall (All Time): #31,413 of 4,157,543Top 1%
67
Patents All Time

Issued Patents All Time

Showing 25 most recent of 67 patents

Patent #TitleCo-InventorsDate
12373131 Data sequencing circuit and method Hidehiro Fujiwara, Haruki Mori 2025-07-29
12369292 Memory device Yi-Hsin Nien, Chih-Yu Lin, Hidehiro Fujiwara 2025-07-22
12230318 Memory device including a word line with portions with different sizes in different metal layers Yi-Hsin Nien, Chih-Yu Lin, Hidehiro Fujiwara, Yen-Huei Chen, Ru-Yu WANG 2025-02-18
12205671 Circuit structure and related method to compensate for sense amplifier leakage Xiaoli Hu, Xiaoxiao Li, Yuqing Sun, Xueqiang Dai, Xiaohua Cheng 2025-01-21
12147784 Compute in memory Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih, Yu-Der Chih, Hidehiro Fujiwara +1 more 2024-11-19
12137548 Four CPP wide memory cell with buried power grid, and method of fabricating same Hidehiro Fujiwara, Chih-Yu Lin, Yen-Huei Chen, Yi-Hsin Nien 2024-11-05
12100436 Method and system to balance ground bounce Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen 2024-09-24
12057161 Memory device with unique read and/or programming parameters Dong-II Moon, Erika Penzo, Henry Chin 2024-08-06
11972810 Read pass voltage dependent recovery voltage setting between program and program verify Han-Ping Chen, Henry Chin 2024-04-30
11972804 Techniques for checking vulnerability to cross-temperature read errors in a memory device Xuan Tian, Henry Chin, Liang Li, Vincent Yin, Tony Zou 2024-04-30
11935586 Memory device and method for computing-in-memory (CIM) Hidehiro Fujiwara, Haruki Mori 2024-03-19
11908545 Memory device and operating method for computing-in-memory Hidehiro Fujiwara, Haruki Mori 2024-02-20
11894051 Temperature-dependent word line voltage and discharge rate for refresh read of non-volatile memory Dong-Il Moon, Abhijith Prakash, Henry Chin 2024-02-06
11853596 Data sequencing circuit and method Hidehiro Fujiwara, Haruki Mori 2023-12-26
11805636 Memory device Yi-Hsin Nien, Chih-Yu Lin, Hidehiro Fujiwara 2023-10-31
11769533 Semiconductor chip having memory and logic cells Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen 2023-09-26
11705203 Digital temperature compensation filtering Henry Chin, Hua-Ling Cynthia Hsu, Fanglin Zhang 2023-07-18
11657870 Method and system to balance ground bounce Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen 2023-05-23
11569246 Four CPP wide memory cell with buried power grid, and method of fabricating same Hidehiro Fujiwara, Chih-Yu Lin, Yen-Huei Chen, Yi-Hsin Nien 2023-01-31
11475926 Sense amplifier circuit for current sensing Xiaoxiao Li, Xiaoli Hu, Shuangdi Zhao, Xi Cao, Xueqiang Dai 2022-10-18
11404113 Memory device including a word line with portions with different sizes in different metal layers Yi-Hsin Nien, Chih-Yu Lin, Hidehiro Fujiwara, Yen-Huei Chen, Ru-Yu WANG 2022-08-02
11322198 Multi word line assertion Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen 2022-05-03
11101288 Three-dimensional memory device containing plural work function word lines and methods of forming the same Yanli Zhang, Dong-Il Moon, Raghuveer S. Makala, Peng Zhang, Ashish Baraskar 2021-08-24
11074966 Method and system to balance ground bounce Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen 2021-07-27
11063063 Three-dimensional memory device containing plural work function word lines and methods of forming the same Yanli Zhang, Dong-Il Moon, Raghuveer S. Makala, Peng Zhang, Ashish Baraskar 2021-07-13