Issued Patents All Time
Showing 26–50 of 67 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11063063 | Three-dimensional memory device containing plural work function word lines and methods of forming the same | Yanli Zhang, Dong-Il Moon, Raghuveer S. Makala, Peng Zhang, Ashish Baraskar | 2021-07-13 |
| 10978143 | Multi-port high performance memory | George M. Braceras, Xiaoli Hu, Igor Arsovski, Yuzheng Jin, Hao Pu +2 more | 2021-04-13 |
| 10957394 | NAND string pre-charge during programming by injecting holes via substrate | Han-Ping Chen, Henry Chin | 2021-03-23 |
| 10950298 | Mixed threshold voltage memory array | Hidehiro Fujiwara, Chih-Yu Lin | 2021-03-16 |
| 10943917 | Three-dimensional memory device with drain-select-level isolation structures and method of making the same | Takaaki Iwai, Makoto Koto, Sayako Nagamine, Ching-Huang Lu, Yanli Zhang +1 more | 2021-03-09 |
| 10943667 | Memory device | Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Hiroki Noguchi | 2021-03-09 |
| 10892008 | Multi word line assertion | Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen | 2021-01-12 |
| 10811110 | Method of reducing injection type of program disturb during program pre-charge in memory device | Hong-Yan Chen, Henry Chin | 2020-10-20 |
| 10790003 | Maintaining channel pre-charge in program operation | Hong-Yan Chen | 2020-09-29 |
| 10770157 | Method of reducing injection type of program disturb during program pre-charge in memory device | Hong-Yan Chen, Henry Chin | 2020-09-08 |
| 10726891 | Reducing post-read disturb in a nonvolatile memory device | Abhijith Prakash, Anubhav Khandelwal, Deepanshu Dutta, Huai-Yuan Tseng, Dengtao Zhao | 2020-07-28 |
| 10685723 | Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word line | Hong-Yan Chen, Yingda Dong | 2020-06-16 |
| 10685978 | Three-dimensional memory device with drain-select-level isolation structures and method of making the same | Ching-Huang Lu, Yanli Zhang, James Kai | 2020-06-16 |
| 10685979 | Three-dimensional memory device with drain-select-level isolation structures and method of making the same | Ching-Huang Lu, Yanli Zhang, James Kai | 2020-06-16 |
| 10636494 | Apparatus and method for reducing noise generated from locked out sense circuits in a non-volatile memory system | Xiang Yang, Stanley Jeong, Huai-Yuan Tseng, Deepanshu Dutta | 2020-04-28 |
| 10636500 | Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel discharge | Hong-Yan Chen, Yingda Dong | 2020-04-28 |
| 10636488 | Multi-sensing scan for cross-temperature mitigation | Lei Lin, Henry Chin, Yingda Dong | 2020-04-28 |
| 10629272 | Two-stage ramp up of word line voltages in memory device to suppress read disturb | Ching-Huang Lu, Hong-Yan Chen | 2020-04-21 |
| 10593411 | Memory device with charge isolation to reduce injection type of program disturb | Hong-Yan Chen | 2020-03-17 |
| 10559370 | System and method for in-situ programming and read operation adjustments in a non-volatile memory | Xiang Yang, Piyush Dak, Huai-Yuan Tseng, Deepanshu Dutta, Mohan Dunga | 2020-02-11 |
| 10510385 | Write scheme for a static random access memory (SRAM) | Xiaoli Hu, Hao Pu | 2019-12-17 |
| 10249372 | Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients | Hong-Yan Chen, Ching-Huang Lu, Yingda Dong | 2019-04-02 |
| 10068651 | Channel pre-charge to suppress disturb of select gate transistors during erase in memory | Vinh Diep, Ashish Baraskar, Ching-Huang Lu, Yingda Dong | 2018-09-04 |
| 9761320 | Reducing hot electron injection type of read disturb during read recovery phase in 3D memory | Hong-Yan Chen, Ching-Huang Lu | 2017-09-12 |
| 9728258 | Ternary content addressable memory | Meng-Fan Chang | 2017-08-08 |