Issued Patents All Time
Showing 1–25 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12211548 | Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-system | Priya Vemparala Guruswamy, Pamela Castalino, Tomoko Ogura Iwasaki | 2025-01-28 |
| 12068037 | Managing sub-block erase operations in a memory sub-system | Kalyan C. Kavalipurapu, Tomoko Ogura Iwasaki, Erwin E. Yu, Yunfei Xu | 2024-08-20 |
| 11894069 | Unselected sub-block source line and bit line pre-charging to reduce read disturb | Xiangyu Yang, Ching-Huang Lu | 2024-02-06 |
| 11749359 | Short program verify recovery with reduced programming disturbance in a memory sub-system | Yingda Dong | 2023-09-05 |
| 11749353 | Managing sub-block erase operations in a memory sub-system | Kalyan C. Kavalipurapu, Tomoko Ogura Iwasaki, Erwin E. Yu, Yunfei Xu | 2023-09-05 |
| 11688471 | Short program verify recovery with reduced programming disturbance in a memory sub-system | Yingda Dong | 2023-06-27 |
| 11670372 | Pre-boosting scheme during a program operation in a memory sub-system | Yingda Dong | 2023-06-06 |
| 11335412 | Managing sub-block erase operations in a memory sub-system | Kalyan C. Kavalipurapu, Tomoko Ogura Iwasaki, Erwin E. Yu, Yunfei Xu | 2022-05-17 |
| 11282582 | Short program verify recovery with reduced programming disturbance in a memory sub-system | Yingda Dong | 2022-03-22 |
| 11183245 | Pre-boosting scheme during a program operation in a memory sub-system | Yingda Dong | 2021-11-23 |
| 10811110 | Method of reducing injection type of program disturb during program pre-charge in memory device | Wei Zhao, Henry Chin | 2020-10-20 |
| 10790003 | Maintaining channel pre-charge in program operation | Wei Zhao | 2020-09-29 |
| 10770157 | Method of reducing injection type of program disturb during program pre-charge in memory device | Wei Zhao, Henry Chin | 2020-09-08 |
| 10748627 | Reducing neighbor word line interference in a two-tier memory device by modifying word line programming order | Yingda Dong, Zhengyi Zhang | 2020-08-18 |
| 10685723 | Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word line | Wei Zhao, Yingda Dong | 2020-06-16 |
| 10665299 | Memory device with channel discharge before program-verify based on data state and sub-block position | Ching-Huang Lu | 2020-05-26 |
| 10665306 | Memory device with discharge voltage pulse to reduce injection type of program disturb | Henry Chin | 2020-05-26 |
| 10636500 | Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel discharge | Wei Zhao, Yingda Dong | 2020-04-28 |
| 10629272 | Two-stage ramp up of word line voltages in memory device to suppress read disturb | Ching-Huang Lu, Wei Zhao | 2020-04-21 |
| 10593411 | Memory device with charge isolation to reduce injection type of program disturb | Wei Zhao | 2020-03-17 |
| 10522232 | Memory device with vpass step to reduce hot carrier injection type of program disturb | Yingda Dong | 2019-12-31 |
| 10438671 | Reducing program disturb by modifying word line voltages at interface in two-tier stack during programming | Yingda Dong | 2019-10-08 |
| 10283202 | Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programming | Yingda Dong | 2019-05-07 |
| 10269435 | Reducing program disturb by modifying word line voltages at interface in two-tier stack after program-verify | Yingda Dong | 2019-04-23 |
| 10249372 | Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients | Wei Zhao, Ching-Huang Lu, Yingda Dong | 2019-04-02 |