Issued Patents All Time
Showing 1–25 of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12430046 | Early program termination with adaptive temperature compensation | Yihang Liu, Jiahui Yuan | 2025-09-30 |
| 12293797 | Apparatus and methods for smart verify with adaptive voltage offset | Longju Liu, Jiahui Yuan | 2025-05-06 |
| 12249378 | CELSRC voltage separation between SLC and XLC for SLC program average ICC reduction | Yu-Chung Lien, Deepanshu Dutta, Jiahui Yuan | 2025-03-11 |
| 12153801 | Non-volatile memory with optimized operation sequence | Yihang Liu, Xiaochen Zhu, Jie Liu, Jiahui Yuan, Feng Gao | 2024-11-26 |
| 12147695 | Non-volatile memory with adapting erase process | Longju Liu, Yi Song, Jiahui Yuan | 2024-11-19 |
| 12148489 | Early detection of programming failure for non-volatile memory | Yi Song, Jiahui Yuan | 2024-11-19 |
| 12094537 | Non-volatile memory with differential temperature compensation for super page programming | Yi Song, Dengtao Zhao, Jiahui Yuan | 2024-09-17 |
| 11972801 | Program voltage dependent program source levels | Xue Bai Pitner, Yu-Chung Lien, Sujjatul Islam | 2024-04-30 |
| 11967388 | Stress test for grown bad blocks | Longju Liu, Parth Amin, Sujjatul Islam, Jiahui Yuan | 2024-04-23 |
| 11894071 | Non-volatile memory with differential temperature compensation for bulk programming | Yi Song, Dengtao Zhao, Jiahui Yuan | 2024-02-06 |
| 11636905 | Temperature compensation for unselected sub-block inhibit bias for mitigating erase disturb | Huai-Yuan Tseng | 2023-04-25 |
| 11355198 | Smart erase scheme | Fanqi Wu, Huai-Yuan Tseng | 2022-06-07 |
| 11211392 | Hole pre-charge scheme using gate induced drain leakage generation | Yanli Zhang, Huai-Yuan Tseng, Peng Zhang | 2021-12-28 |
| 11189351 | Peak and average current reduction for sub block memory operation | Yu-Chung Lien, Huai-Yuan Tseng | 2021-11-30 |
| 11081162 | Source side precharge and boosting improvement for reverse order program | Yu-Chung Lien, Huai-Yuan Tseng | 2021-08-03 |
| 10714169 | System and method for programming non-volatile memory during burst sequential write | Phil Reusswig, Pitamber Shukla, Mohan Dunga, Sahil Sharma, Rohit Sehgal +1 more | 2020-07-14 |
| 10529435 | Fast detection of defective memory block to prevent neighbor plane disturb | Deepanshu Dutta, Long Pham | 2020-01-07 |
| 10467134 | Dynamic anneal characteristics for annealing non-volatile memory | Navneeth Kankani, Linh Tien Truong, Deepanshu Dutta | 2019-11-05 |
| 10229744 | First read countermeasures in memory | Deepanshu Dutta, Idan Alrod, Huai-Yuan Tseng, Amul Desai, Jun Wan +1 more | 2019-03-12 |
| 10068656 | Non-volatile memory with multi-pass programming | Deepanshu Dutta, Chris Yip | 2018-09-04 |
| 10026486 | First read countermeasures in memory | Deepanshu Dutta, Idan Alrod, Huai-Yuan Tseng, Amul Desai, Jun Wan +1 more | 2018-07-17 |
| 9805809 | State-dependent read compensation | Zhenming Zhou, Guirong Liang, Gerrit Jan Hemink, Dana Lee, Chandu Gorla +1 more | 2017-10-31 |
| 9761290 | Overheat prevention for annealing non-volatile memory | Navneeth Kankani, Ning Ye, Suresh Upadhyayula, Deepanshu Dutta | 2017-09-12 |
| 9747987 | Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells | Venkatraman Prabhakar, Long Hinh, Kaveh Shakeri | 2017-08-29 |
| 9721652 | State dependent sensing for wordline interference correction | Deepanshu Dutta | 2017-08-01 |