Issued Patents All Time
Showing 26–50 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11393780 | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala | 2022-07-19 |
| 11387244 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Raghuveer S. Makala, Fei Zhou, Yao-Sheng Lee | 2022-07-12 |
| 11387250 | Three-dimensional memory device containing metal-organic framework inter-word line insulating layers | Ramy Nashed Bassely Said, Fei Zhou, Raghuveer S. Makala, Yao-Sheng Lee | 2022-07-12 |
| 11296028 | Semiconductor device containing metal-organic framework inter-line insulator structures and methods of manufacturing the same | Ramy Nashed Bassely Said, Fei Zhou, Raghuveer S. Makala, Yao-Sheng Lee | 2022-04-05 |
| 11296101 | Three-dimensional memory device including an inter-tier etch stop layer and method of making the same | Yao-Sheng Lee, Raghuveer S. Makala, Johann Alsmeier | 2022-04-05 |
| 11244953 | Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same | Raghuveer S. Makala, Yao-Sheng Lee | 2022-02-08 |
| 11201139 | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same | Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou | 2021-12-14 |
| 11171097 | Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala, Fei Zhou, Yao-Sheng Lee | 2021-11-09 |
| 11145628 | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same | Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou | 2021-10-12 |
| 11114406 | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip | Raghuveer S. Makala, Yao-Sheng Lee, Jian Chen | 2021-09-07 |
| 10950629 | Three-dimensional flat NAND memory device having high mobility channels and methods of making the same | Raghuveer S. Makala, Fei Zhou, Yao-Sheng Lee | 2021-03-16 |
| 10910272 | Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same | Fei Zhou, Raghuveer S. Makala | 2021-02-02 |
| 10847408 | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip | Raghuveer S. Makala, Yao-Sheng Lee, Jian Chen | 2020-11-24 |
| 10748925 | Three-dimensional memory device containing channels with laterally pegged dielectric cores | Masanori Tsutsumi, Manabu Kakazu, Raghuveer S. Makala | 2020-08-18 |
| 10700086 | Three-dimensional flat NAND memory device having high mobility channels and methods of making the same | Raghuveer S. Makala, Fei Zhou, Yao-Sheng Lee | 2020-06-30 |
| 10622368 | Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof | Raghuveer S. Makala, Rahul Sharangpani, Somesh Peri, Yao-Sheng Lee, James Kai | 2020-04-14 |
| 10622369 | Three-dimensional memory device including contact via structures that extend through word lines and method of making the same | Fei Zhou, Raghuveer S. Makala, Hiroyuki Kinoshita, Yanli Zhang, James Kai +2 more | 2020-04-14 |
| 10529620 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Fumitaka Amano +1 more | 2020-01-07 |
| 10468596 | Damascene process for forming three-dimensional cross rail phase change memory devices | Raghuveer S. Makala, Yao-Sheng Lee | 2019-11-05 |
| 10461163 | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof | Yoshihiro Kanno, Raghuveer S. Makala, Yanli Zhang, Jin Liu, Murshed Chowdhury +1 more | 2019-10-29 |
| 10453854 | Three-dimensional memory device with thickened word lines in terrace region | Yoshihiro Kanno, Raghuveer S. Makala, Yanli Zhang, Jin Liu, Murshed Chowdhury | 2019-10-22 |
| 10438964 | Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof | Raghuveer S. Makala, Yanli Zhang, Yao-Sheng Lee | 2019-10-08 |
| 10381364 | Three-dimensional memory device including vertically offset drain select level layers and method of making thereof | Fei Zhou, Rahul Sharangpani, Yanli Zhang, Raghuveer S. Makala | 2019-08-13 |
| 10256247 | Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof | Raghuveer S. Makala, Yao-Sheng Lee | 2019-04-09 |
| 10199434 | Three-dimensional cross rail phase change memory device and method of manufacturing the same | Yao-Sheng Lee, Raghuveer S. Makala | 2019-02-05 |