Issued Patents All Time
Showing 51–65 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7279389 | Technique for forming a transistor having raised drain and source regions with a tri-layer hard mask for gate patterning | Karla Romero, Scott Luning, Hans Van Meer | 2007-10-09 |
| 7223662 | Method of forming an epitaxial layer for raised drain and source regions by removing surface defects of the initial crystal surface | Scott Luning, Linda Black | 2007-05-29 |
| 7192881 | Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity | Karsten Wieczorek, Christoph Schwan | 2007-03-20 |
| 7176110 | Technique for forming transistors having raised drain and source regions with different heights | Ralf van Bentum, Scott Luning | 2007-02-13 |
| 7151020 | Conversion of transition metal to silicide through back end processing in integrated circuit technology | Jeffrey P. Patton, Austin Frenkel, Robert J. Chiu, Errol Todd Ryan, Darin A. Chan +3 more | 2006-12-19 |
| 7144786 | Technique for forming a transistor having raised drain and source regions with a reduced number of process steps | Ralf van Bentum, Scott Luning | 2006-12-05 |
| 7122410 | Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrate | Karsten Wieczorek, Matthias Schaller | 2006-10-17 |
| 7109086 | Technique for forming a spacer for a line element by using an etch stop layer deposited by a highly directional deposition technique | Katja Huy, Markus Lenski | 2006-09-19 |
| 7067410 | Method of forming a metal silicide | Karsten Wieczorek, Manfred Horstmann | 2006-06-27 |
| 7005358 | Technique for forming recessed sidewall spacers for a polysilicon line | Katja Huy, Christoph Schwan | 2006-02-28 |
| 6969678 | Multi-silicide in integrated circuit technology | Robert J. Chiu, Paul R. Besser, Simon S. Chan, Jeffrey P. Patton, Austin Frenkel +1 more | 2005-11-29 |
| 6933620 | Semiconductor component and method of manufacture | Scott Lunning, Karsten Wieczorek | 2005-08-23 |
| 6838363 | Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material | Karsten Wieczorek, Manfred Horstmann | 2005-01-04 |
| 6806126 | Method of manufacturing a semiconductor component | Scott Luning, Karsten Wieczorek | 2004-10-19 |
| 6746927 | Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device | Karsten Wieczorek, Christof Streck | 2004-06-08 |