Issued Patents All Time
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7829421 | SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same | Andy Wei, Jan Hoentschel, Manfred Horstmann | 2010-11-09 |
| 7767540 | Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility | Igor Peidous, Andy Wei | 2010-08-03 |
| 7763515 | Transistor with embedded silicon/germanium material on a strained semiconductor on insulator substrate | Andy Wei, Roman Boschke, Manfred Horstmann | 2010-07-27 |
| 7763507 | Stressed interlayer dielectric with reduced probability for void generation in a semiconductor device by using an intermediate etch control layer of increased thickness | Ralf Richter, Heike Salz, Volker Grimm | 2010-07-27 |
| 7763505 | Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientations | Andreas Gehring, Markus Lenski, Jan Hoentschel | 2010-07-27 |
| 7723195 | Method of forming a field effect transistor | Andy Wei, Jan Hoentschel, Manfred Horstmann | 2010-05-25 |
| 7696052 | Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions | Andy Wei, Jan Hoentschel, Manfred Horstmann, Peter Javorka, Joe Bloomquist | 2010-04-13 |
| 7659213 | Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same | Andy Wei, Jan Hoentschel, Manfred Horstmann | 2010-02-09 |
| 7629211 | Field effect transistor and method of forming a field effect transistor | Sven Beyer, Rolf Stephan, Manfred Horstmann | 2009-12-08 |
| 7586153 | Technique for forming recessed strained drain/source regions in NMOS and PMOS transistors | Jan Hoentschel, Andy Wei, Michael Raab | 2009-09-08 |
| 7579262 | Different embedded strain layers in PMOS and NMOS transistors and a method of forming the same | Jan Hoentschel, Andy Wei, Manfred Horstmann | 2009-08-25 |
| 7510926 | Technique for providing stress sources in MOS transistors in close proximity to a channel region | Andy Wei, Jan Hoentschel, Manfred Horstmann | 2009-03-31 |
| 7494872 | Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor | Karsten Wieczorek, Thomas Feudel, Wolfgang Buchholtz | 2009-02-24 |
| 7494906 | Technique for transferring strain into a semiconductor region | Martin Gerhardt, Frank Wirbeleit | 2009-02-24 |
| 7456062 | Method of forming a semiconductor device | William G. En, Eric N. Paton, Paul R. Besser, Simon S. Chan | 2008-11-25 |
| 7421060 | Method of determining an orientation of a crystal lattice of a first substrate relative to a crystal lattice of a second substrate | Inka Zienert, Jochen Rinderknecht | 2008-09-02 |
| 7402485 | Method of forming a semiconductor device | William G. En, Eric N. Paton, Scott Luning | 2008-07-22 |
| 7402497 | Transistor device having an increased threshold stability without drive current degradation | Andy Wei, Jan Hoentschel, Manfred Horstmann | 2008-07-22 |
| 7399663 | Embedded strain layer in thin SOI transistors and a method of forming the same | Jan Hoentschel, Andy Wei, Manfred Horstmann | 2008-07-15 |
| 7381624 | Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate | Andy Wei, Michael Raab, Manfred Horstmann | 2008-06-03 |
| 7381622 | Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process | Andreas Hellmich, Gunter Grasshoff, Fernando Luiz Koch, Andy Wei | 2008-06-03 |
| 7354838 | Technique for forming a contact insulation layer with enhanced stress transfer efficiency | Andy Wei, Markus Lenski | 2008-04-08 |
| 7338872 | Method of depositing a layer of a material on a substrate | Christoph Schwan, Thomas Feudel | 2008-03-04 |
| 7329571 | Technique for providing multiple stress sources in NMOS and PMOS transistors | Jan Hoentschel, Andy Wei, Manfred Horstmann | 2008-02-12 |
| 7307026 | Method of forming an epitaxial layer for raised drain and source regions by removing contaminations | Christof Streck, Guido Koerner | 2007-12-11 |