Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9484459 | Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer | Peter Javorka, Stephan Kronholz | 2016-11-01 |
| 9224863 | Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer | Peter Javorka, Stephan Kronholz | 2015-12-29 |
| 8835209 | Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areas | Stephan Kronholz, Markus Lenski | 2014-09-16 |
| 8765559 | Sophisticated gate electrode structures formed by cap layer removal with reduced loss of embedded strain-inducing semiconductor material | Stephan Kronholz, Markus Lenski, Frank Seliger, Frank Richter | 2014-07-01 |
| 8674458 | Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process | Stephan Kronholz, Rohit Pal | 2014-03-18 |
| 8614122 | Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning process | Stephan Kronholz, Carsten Reichel | 2013-12-24 |
| 8518784 | Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment | Stephan Kronholz, Thorsten Kammler, Carsten Reichel | 2013-08-27 |
| 8466520 | Transistor with an embedded strain-inducing material having a gradually shaped configuration | Stephan Kronholz, Vassilios Papageorgiou | 2013-06-18 |
| 8361858 | Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy | Stephan Kronholz, Andreas Naumann | 2013-01-29 |
| 8338274 | Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration | Stephan Kronholz, Vassilios Papageorgiou, Jan Hoentschel | 2012-12-25 |
| 8202777 | Transistor with an embedded strain-inducing material having a gradually shaped configuration | Stephan Kronholz, Vassilios Papageorgiou | 2012-06-19 |