Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11899376 | Methods for forming alignment marks | Prayudi Lianto, Marvin L. Bernt, El Mehdi Bazizi, Guan Huei See | 2024-02-13 |
| 11171036 | Preventing dielectric void over trench isolation region | Yongjun Shi, Wei Hong, Chun Yu Wong, Halting Wang | 2021-11-09 |
| 11164794 | Semiconductor structures in a wide gate pitch region of semiconductor devices | Wei Hong, Yanping Shen | 2021-11-02 |
| 11018221 | Air gap regions of a semiconductor device | Chun Yu Wong, Haiting Wang, Yong Shi, Xiaoming Yang | 2021-05-25 |
| 10957578 | Single diffusion break device for FDSOI | Wei Hong, Hui Zang, Hsien-Ching Lo, Zhenyu Hu | 2021-03-23 |
| 10825897 | Formation of enhanced faceted raised source/drain EPI material for transistor devices | Wei Hong, George R. Mulfinger, Hui Zang, Zhenyu Hu | 2020-11-03 |
| 10797049 | FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same | Hui Zang, Haiting Wang, Chung Foong Tan, Guowei Xu, Ruilong Xie +1 more | 2020-10-06 |
| 10777642 | Formation of enhanced faceted raised source/drain epi material for transistor devices | Wei Hong, George R. Mulfinger, Hui Zang, Zhenyu Hu | 2020-09-15 |
| 10756184 | Faceted epitaxial source/drain regions | George R. Mulfinger, Timothy J. McArdle, Judson R. Holt, Steffen Sichler, Omur Isil Aydin +3 more | 2020-08-25 |
| 10546775 | Field-effect transistors with improved dielectric gap fill | Wei Hong, Yongjun Shi, Yi Qi, Hsien-Ching Lo, Hui Zang | 2020-01-28 |
| D758990 | Headphones | — | 2016-06-14 |