Issued Patents All Time
Showing 25 most recent of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12271225 | Mobile terminal protective shell | — | 2025-04-08 |
| 11655641 | Construction building equipment and construction method thereof | Xiaoqing Liu, Huayong Lu, Weixiang Ding, Wei Wang, Shiqing Qian +16 more | 2023-05-23 |
| D965577 | Mobile phone case | — | 2022-10-04 |
| 11321098 | Multi-operating system device, notification device and methods thereof | Yong Li, Bin Li | 2022-05-03 |
| 10978566 | Middle of line structures | Hui Zang, Keith H. Tabakman, Viraj Sardesai | 2021-04-13 |
| 10923469 | Vertical resistor adjacent inactive gate over trench isolation | Hui Zang, Jiehui Shu, Ruilong Xie, Yurong Wen, Garo Derderian +2 more | 2021-02-16 |
| 10879180 | FinFET with etch-selective spacer and self-aligned contact capping layer | Hui Zang, Scott Beasor, Ruilong Xie | 2020-12-29 |
| 10878114 | Software handling device, server system and methods thereof | Yong Li, Bin Li | 2020-12-29 |
| 10872979 | Spacer structures for a transistor device | Hui Zang, Chung Foong Tan, Haiting Wang, Yue Zhong, Ruilong Xie +2 more | 2020-12-22 |
| 10818659 | FinFET having upper spacers adjacent gate and source/drain contacts | Haiting Wang, Hui Zang, Scott Beasor | 2020-10-27 |
| 10811409 | Method of manufacturing FinFET with reduced parasitic capacitance and FinFET structure formed thereby | Jiehui Shu, Hui Zang, Jian Gao | 2020-10-20 |
| 10797049 | FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same | Hui Zang, Haiting Wang, Chung Foong Tan, Ruilong Xie, Scott Beasor +1 more | 2020-10-06 |
| 10784143 | Trench isolation preservation during transistor fabrication | Haiting Wang, Hui Zang, Yue Zhong | 2020-09-22 |
| 10734233 | FinFET with high-k spacer and self-aligned contact capping layer | Hui Zang, Keith H. Tabakman | 2020-08-04 |
| 10692987 | IC structure with air gap adjacent to gate structure and methods of forming same | Haiting Wang, Hui Zang | 2020-06-23 |
| 10685881 | Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a semiconductor device | Hui Zang, Haiting Wang | 2020-06-16 |
| 10658363 | Cut inside replacement metal gate trench to mitigate N-P proximity effect | Balaji Kannan, Ayse M. Ozbek, Tao Chu, Bala Haran, Vishal Chhabra +1 more | 2020-05-19 |
| 10651173 | Single diffusion cut for gate structures | Hui Zang, Ruilong Xie, Haiting Wang | 2020-05-12 |
| 10636890 | Chamfered replacement gate structures | Haiting Wang, Rongtao Lu, Chih-Chiang Chang, Hui Zang, Scott Beasor +1 more | 2020-04-28 |
| 10636893 | Replacement metal gate with reduced shorting and uniform chamfering | Hui Zang | 2020-04-28 |
| 10628171 | Multi-operating system device, notification device and methods thereof | Yong Li, Bin Li | 2020-04-21 |
| 10629739 | Methods of forming spacers adjacent gate structures of a transistor device | Hui Zang, Chung Foong Tan, Haiting Wang, Yue Zhong, Ruilong Xie +2 more | 2020-04-21 |
| 10600876 | Methods for chamfering work function material layers in gate cavities having varying widths | Hui Zang, Rongtao Lu | 2020-03-24 |
| 10580875 | Middle of line structures | Hui Zang, Keith H. Tabakman, Viraj Sardesai | 2020-03-03 |
| 10534924 | Software handling device, server system and methods thereof | Yong Li, Bin Li | 2020-01-14 |