Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated CMOS source drain formation with advanced control

Integrated CMOS source drain formation with advanced control

US Patent 11309404 · Granted Apr 19, 2022

Estimated economic value: $71,820,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned wide backside power rail contacts to multiple transistor sources2025
Methods of correlating zones of processing chambers, and related systems and met2025
Horizontal GAA nano-wire and nano-slab transistors2025
Atomic layer self aligned substrate processing and integrated toolset2025
Domestic dishwashing machine2025
Domestic electrical appliance and door latch therefor2025
Gate all around device with fully-depleted silicon-on-insulator2025
Multi color stack for self aligned dual pattern formation for multi purpose devi2025
Multi color stack for self aligned dual pattern formation for multi purpose devi2025
Formation of gate all around device2025
Graded superlattice structure for gate all around devices2025
Brake plate for a rope grab for rope climbing, rope grab for rope climbing, and 2025