Issued Patents All Time
Showing 101–125 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6533894 | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition | Sujit Sharan, Gurtej S. Sandhu, Paul Smith | 2003-03-18 |
| 6482746 | Computer readable medium for controlling a method of cleaning a process chamber | Anand Vasudev, Toshio Itoh, Ramamujapuram A. Srinivas, Frederick Wu, Li Wu +1 more | 2002-11-19 |
| 6432479 | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film | Ramanujapuram A. Srinivas, Li Wu | 2002-08-13 |
| 6402806 | Method for unreacted precursor conversion and effluent removal | John V. Schmitt, Ling Chen, George Michael Bleyle, Yu D. Cong, Alfred Mak | 2002-06-11 |
| 6395128 | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition | Sujit Sharan, Gurtej S. Sandhu, Paul Smith | 2002-05-28 |
| 6365495 | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature | Shulin Wang, Huan Luo, Keith Kuang-Kuo Koai, Ming Xi, Russell C. Ellwanger | 2002-04-02 |
| 6355106 | Deposition of copper with increased adhesion | Bo Zheng, Ling Chen, Alfred Mak | 2002-03-12 |
| 6326690 | Method of titanium/titanium nitride integration | Shulin Wang, Ming Xi, Zvi Lando | 2001-12-04 |
| 6319728 | Method for treating a deposited film for resistivity reduction | Mohan K. Bhan, Ling Chen, Bo Zheng, Justin Jones, Seshadri Ganguli +2 more | 2001-11-20 |
| 6309713 | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition | Alfred Mak, Ling Chen, David Charles Smith, Steve Ghanayem | 2001-10-30 |
| 6297152 | CVD process for DCS-based tungsten silicide | Toshio Itoh | 2001-10-02 |
| 6296712 | Chemical vapor deposition hardware and process | Xin Sheng Guo, Mohan K. Bhan, Justin Jones, Lawrence Chung-Lai Lei, Russell C. Ellwanger +2 more | 2001-10-02 |
| 6294466 | HDP-CVD apparatus and process for depositing titanium films for semiconductor devices | — | 2001-09-25 |
| 6291343 | Plasma annealing of substrates to improve adhesion | Jennifer Meng Chu Tseng, Ling Chen, David Charles Smith, Karl A. Littau, Chyi Chern +1 more | 2001-09-18 |
| 6270859 | Plasma treatment of titanium nitride formed by chemical vapor deposition | Jun Zhao, Ashok Sinha, Avi Tepman, Lee Luo, Alex Schreiber +4 more | 2001-08-07 |
| 6270621 | Etch chamber | Simon W. Tam, Semyon Sherstinsky, Alan F. Morrison, Ashok Sinha | 2001-08-07 |
| 6242347 | Method for cleaning a process chamber | Anand Vasudev, Toshio Itoh, Ramanujapuram A. Srinivas, Frederick Wu, Li Wu +1 more | 2001-06-05 |
| 6235646 | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition | Sujit Sharan, Gurtej S. Sandhu, Paul Smith | 2001-05-22 |
| 6214714 | Method of titanium/titanium nitride integration | Shulin Wang, Ming Xi, Zvi Lando | 2001-04-10 |
| 6193813 | Utilization of SiH4 soak and purge in deposition processes | Meng Chu Tseng, Ramanujapuram A. Srinivas, Klaus-Dieter Rinnen, Moshe Eizenberg, Susan Telford | 2001-02-27 |
| 6193836 | Center gas feed apparatus for a high density plasma reactor | Jon Mohn, Raymond Hung, Kenneth S. Collins, Ru-Liang Lee | 2001-02-27 |
| 6179925 | Method and apparatus for improved control of process and purge material in substrate processing system | John V. Schmitt, Bo Zheng, Stephen Voss | 2001-01-30 |
| 6171661 | Deposition of copper with increased adhesion | Bo Zheng, Ling Chen, Alfred Mak | 2001-01-09 |
| 6159867 | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition | Sujit Sharan, Gurtej S. Sandhu, Paul Smith | 2000-12-12 |
| 6155198 | Apparatus for constructing an oxidized film on a semiconductor wafer | Michael Danek, Marvin Liao, Eric A. Englhardt, Yeh-Jen Kao, Dale R. DuBois +1 more | 2000-12-05 |