Issued Patents All Time
Showing 2,326–2,350 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9034701 | Semiconductor device with a low-k spacer and method of forming the same | Bruce B. Doris, Ali Khakifirooz, Douglas C. La Tulipe, Jr. | 2015-05-19 |
| 9034703 | Self aligned contact with improved robustness | Ali Khakifirooz, Shom Ponoth, Raghavasimhan Sreenivasan | 2015-05-19 |
| 9035365 | Raised source/drain and gate portion with dielectric spacer or air gap spacer | Thomas N. Adam, Ali Khakifirooz, Juntao Li, Alexander Reznicek | 2015-05-19 |
| 9035391 | Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials | Alexander Reznicek, Thomas N. Adam, Paul C. Jamison, Ali Khakifirooz | 2015-05-19 |
| 9035465 | Forming semiconductor chip connections | Timothy J. Dalton, Mukta G. Farooq, John A. Fitzsimmons, Louis L. Hsu | 2015-05-19 |
| 9029208 | Semiconductor device with replacement metal gate and method for selective deposition of material for replacement metal gate | Junli Wang, Keith Kwong Hon Wong, Chih-Chao Yang | 2015-05-12 |
| 9029913 | Silicon-germanium fins and silicon fins on a bulk substrate | Henry K. Utomo, Ramachandra Divakaruni, Myung-Hee Na, Ravikumar Ramachandran, Huiling Shang | 2015-05-12 |
| 9029988 | Through silicon via in n+ epitaxy wafers with reduced parasitic capacitance | Subramanian S. Iyer, Pranita Kerber, Ali Khakifirooz | 2015-05-12 |
| 9029920 | Semiconductor devices and methods of fabrication with reduced gate and contact resistances | Ruilong Xie, Xiuyu Cai, Vimal Kamineni, Ali Khakifirooz | 2015-05-12 |
| 9016236 | Method and apparatus for angular high density plasma chemical vapor deposition | Daewon Yang, Pavel Smetana, Richard S. Wise, Keith Kwong Hon Wong | 2015-04-28 |
| 9018714 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Bruce B. Doris, Ali Khakifirooz, Pranita Kerber, Christian Lavoie | 2015-04-28 |
| 9018052 | Integrated circuit including DRAM and SRAM/logic | Veeraraghavan S. Basker, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz, Pranita Kerber +2 more | 2015-04-28 |
| 9018024 | Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness | Nathaniel Berliner, Jason E. Cummings, Toshiharu Furukawa, Jed H. Rankin, Robert R. Robison +1 more | 2015-04-28 |
| 9006816 | Memory device having multiple dielectric gate stacks and related methods | Prasanna Khare, Stephane Allegret-Maret, Nicolas Loubet, Qing Liu, Hemanth Jagannathan +2 more | 2015-04-14 |
| 9006054 | Lateral diode compatible with FinFET and method to fabricate same | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-04-14 |
| 9006071 | Thin channel MOSFET with silicide local interconnect | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2015-04-14 |
| 9006789 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-04-14 |
| 8999774 | Bulk fin-field effect transistors with well defined isolation | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-04-07 |
| 8999791 | Formation of semiconductor structures with variable gate lengths | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-04-07 |
| 8999799 | Maskless dual silicide contact formation | Praneet Adusumilli, Emre Alptekin, Shom Ponoth, Balasubramanian Pranatharthiharan | 2015-04-07 |
| 9000522 | FinFET with dielectric isolation by silicon-on-nothing and method of fabrication | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-04-07 |
| 9000537 | FinFET devices having recessed liner materials to define different fin heights | Xiuyu Cai, Ruilong Xie, Ali Khakifirooz | 2015-04-07 |
| 8993399 | FinFET structures having silicon germanium and silicon fins | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-03-31 |
| 8993382 | Bulk fin-field effect transistors with well defined isolation | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-03-31 |
| 8994006 | Non-volatile memory device employing semiconductor nanoparticles | Robert H. Dennard, Hemanth Jagannathan, Ali Khakifirooz, Tak H. Ning, Ghavam G. Shahidi | 2015-03-31 |