Issued Patents All Time
Showing 2,376–2,400 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8941156 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, David V. Horak, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert +4 more | 2015-01-27 |
| 8936992 | Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate | Roger A. Booth, Jr., Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2015-01-20 |
| 8937345 | Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact | John E. Barth, Jr., Michael A. Sperling, Geng Wang | 2015-01-20 |
| 8933528 | Semiconductor fin isolation by a well trapping fin portion | Henry K. Utomo, Ramachandra Divakaruni, Ravikumar Ramachandran, Huiling Shang, Reinaldo Vega | 2015-01-13 |
| 8933515 | Device structure, layout and fabrication method for uniaxially strained transistors | Stephen W. Bedell, Huiming Bu, Bruce B. Doris, Johnathan E. Faltermeier, Ali Khakifirooz +2 more | 2015-01-13 |
| 8932932 | Highly scalable trench capacitor | Johnathan E. Faltermeier, Anne Marie Kimball | 2015-01-13 |
| 8932918 | FinFET with self-aligned punchthrough stopper | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-01-13 |
| 8928096 | Buried-channel field-effect transistors | Ali Khakifirooz, Pranita Kulkarni, Tak H. Ning | 2015-01-06 |
| 8928086 | Strained finFET with an electrically isolated channel | Henry K. Utomo, Ramachandra Divakaruni, Dechao Guo, Myung-Hee Na, Ravikumar Ramachandran +2 more | 2015-01-06 |
| 8928067 | Bulk fin-field effect transistors with well defined isolation | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-01-06 |
| 8927387 | Robust isolation for thin-box ETSOI MOSFETS | Bruce B. Doris, Balasubramanian S. Haran, Sanjay C. Mehta, Stefan Schmitz | 2015-01-06 |
| 8927363 | Integrating channel SiGe into pFET structures | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-01-06 |
| 8921908 | On-chip capacitors in combination with CMOS devices on extremely thin semiconductor on insulator (ETSOI) substrates | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2014-12-30 |
| 8921191 | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same | Xiuyu Cai, Ruilong Xie, Ali Khakifirooz | 2014-12-30 |
| 8921198 | Method and structure for forming a deep trench capacitor | Roger A. Booth, Jr., Robert Hannon, Ravi M. Todi, Geng Wang | 2014-12-30 |
| 8923666 | Electrically controlled optical fuse and method of fabrication | Raghavasimhan Sreenivasan | 2014-12-30 |
| 8916443 | Semiconductor device with epitaxial source/drain facetting provided at the gate edge | Thomas N. Adam, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2014-12-23 |
| 8916933 | Semiconductor devices having tensile and/or compressive strain and methods of manufacturing and design structure | Carl Radens | 2014-12-23 |
| 8901664 | High-K/metal gate CMOS finFET with improved pFET threshold voltage | Veeraraghavan S. Basker, Bruce B. Doris, Johnathan E. Faltermeier, Ali Khakifirooz | 2014-12-02 |
| 8901672 | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-12-02 |
| 8900936 | FinFET device having reduce capacitance, access resistance, and contact resistance | Pranita Kulkarni, Ali Khakifirooz, Bruce B. Doris, Ghavam G. Shahidi, Hemanth Jagannathan | 2014-12-02 |
| 8900951 | Gate-all-around nanowire MOSFET and method of formation | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-12-02 |
| 8901619 | Asymmetric FinFET devices | Bruce B. Doris, Ying Zhang | 2014-12-02 |
| 8895381 | Method of co-integration of strained-Si and relaxed Si or strained SiGe FETs on insulator with planar and non-planar architectures | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-11-25 |
| 8895379 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Christian Lavoie | 2014-11-25 |