Issued Patents All Time
Showing 2,426–2,450 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8841200 | Simultaneously forming a through silicon via and a deep trench structure | Mukta G. Farooq, Louis L. Hsu | 2014-09-23 |
| 8841189 | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2014-09-23 |
| 8841185 | High density bulk fin capacitor | Ali Khakifirooz, Thomas N. Adam, Alexander Reznicek | 2014-09-23 |
| 8835250 | FinFET trench circuit | Jonathan E. Faltermeier, Veeraraghavan S. Basker, Theodorus E. Standaert | 2014-09-16 |
| 8836050 | Structure and method to fabricate a body contact | Chengwen Pei, Roger A. Booth, Jr., Joseph Ervin, Ravi M. Todi, Geng Wang | 2014-09-16 |
| 8835900 | Highly scaled ETSOI floating body memory and memory circuit | Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2014-09-16 |
| 8835262 | Methods of forming bulk FinFET devices by performing a recessing process on liner materials to define different fin heights and FinFET devices with such recessed liner materials | Xiuyu Cai, Ruilong Xie, Ali Khakifirooz | 2014-09-16 |
| 8829612 | Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers | Xi Li, Richard S. Wise | 2014-09-09 |
| 8828828 | MOSFET including asymmetric source and drain regions | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2014-09-09 |
| 8828831 | Epitaxial replacement of a raised source/drain | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2014-09-09 |
| 8829585 | High density memory cells using lateral epitaxy | Roger A. Booth, Jr., Joseph Ervin, David M. Fried, Byeong Y. Kim, Chengwen Pei +2 more | 2014-09-09 |
| 8822320 | Dense finFET SRAM | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2014-09-02 |
| 8815656 | Semiconductor device and method with greater epitaxial growth on 110 crystal plane | Thomas N. Adam, Judson R. Holt, Keith H. Tabakman, Alexander Reznicek | 2014-08-26 |
| 8816436 | Method and structure for forming fin resistors | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2014-08-26 |
| 8815742 | Methods of forming bulk FinFET semiconductor devices by performing a liner recessing process to define fin heights and FinFET devices with such a recessed liner | Xiuyu Cai, Ruilong Xie, Ali Khakifirooz | 2014-08-26 |
| 8815734 | Use of gas cluster ion beam to reduce metal void formation in interconnect structures | Junli Wang, Keith Kwong Hon Wong, Chih-Chao Yang | 2014-08-26 |
| 8815694 | Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation | Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kerber | 2014-08-26 |
| 8809994 | Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate | Roger A. Booth, Jr., Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2014-08-19 |
| 8809920 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Shom Ponoth, Alexander Reznicek, Raghavasimhan Sreenivasan +2 more | 2014-08-19 |
| 8802513 | Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials | Alexander Reznicek, Thomas N. Adam, Paul C. Jamison, Ali Khakifirooz | 2014-08-12 |
| 8803233 | Junctionless transistor | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Tak H. Ning | 2014-08-12 |
| 8802497 | Forming semiconductor chip connections | Louis L. Hsu, Timothy J. Dalton, Mukta G. Farooq, John A. Fitzsimmons | 2014-08-12 |
| 8796093 | Doping of FinFET structures | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2014-08-05 |
| 8796773 | Metal gate and high-K dielectric devices with PFET channel SiGe | Bruce B. Doris, Keith Kwong Hon Wong | 2014-08-05 |
| 8785273 | FinFET non-volatile memory and method of fabrication | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2014-07-22 |