Issued Patents All Time
Showing 2,401–2,425 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8896032 | Self-aligned biosensors with enhanced sensitivity | Bruce B. Doris, Ali Khakifirooz, Raghavasimhan Sreenivasan, Sufi Zafar | 2014-11-25 |
| 8890245 | Raised source/drain structure for enhanced strain coupling from stress liner | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2014-11-18 |
| 8889564 | Suspended nanowire structure | James J. Demarest, Balasubramanian S. Haran | 2014-11-18 |
| 8889562 | Double patterning method | Bruce B. Doris, Ali Khakifirooz, Ying Zhang | 2014-11-18 |
| 8889495 | Semiconductor alloy fin field effect transistor | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2014-11-18 |
| 8884344 | Self-aligned contacts for replacement metal gate transistors | Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan, Thomas N. Adam | 2014-11-11 |
| 8877604 | Device structure with increased contact area and reduced gate capacitance | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2014-11-04 |
| 8878311 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Bruce B. Doris, Ali Khakifirooz, Pranita Kerber, Christian Lavoie | 2014-11-04 |
| 8871596 | Method of multiple patterning to form semiconductor devices | Kuang-Jung Chen, Bruce B. Doris, Steven J. Holmes, Sen Liu | 2014-10-28 |
| 8872172 | Embedded source/drains with epitaxial oxide underlayer | Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan, Thomas N. Adam | 2014-10-28 |
| 8866227 | Thin semiconductor-on-insulator MOSFET with co-integrated silicon, silicon germanium and silicon doped with carbon channels | Thomas N. Adam, Stephen W. Bedell, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek +2 more | 2014-10-21 |
| 8865561 | Back-gated substrate and semiconductor device, and related method of fabrication | Thomas N. Adam, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2014-10-21 |
| 8859376 | Transistor with improved sigma-shaped embedded stressor and method of formation | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2014-10-14 |
| 8859302 | Structure and method for adjusting threshold voltage of the array of transistors | Ali Khakifirooz, Jin Cai, Robert H. Dennard, Tak H. Ning | 2014-10-14 |
| 8859348 | Strained silicon and strained silicon germanium on insulator | Stephen W. Bedell, Bruce B. Doris, Ali Khakifirooz, Devendra K. Sadana | 2014-10-14 |
| 8860138 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2014-10-14 |
| 8860123 | Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods | Prasanna Khare, Stephane Allegret-Maret, Nicolas Loubet, Qing Liu, Hemanth Jagannathan +2 more | 2014-10-14 |
| 8859379 | Stress enhanced finFET devices | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2014-10-14 |
| 8853038 | Raised source/drain structure for enhanced strain coupling from stress liner | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2014-10-07 |
| 8853781 | Rare-earth oxide isolated semiconductor fin | Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2014-10-07 |
| 8853750 | FinFET with enhanced embedded stressor | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2014-10-07 |
| 8853040 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Bruce B. Doris, Pranita Kerber, Ali Khakifirooz, Ghavam G. Shahidi | 2014-10-07 |
| 8846470 | Metal trench capacitor and improved isolation and methods of manufacture | Roger A. Booth, Jr., Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2014-09-30 |
| 8841188 | Bulk finFET with controlled fin height and high-K liner | Alexander Reznicek, Thomas N. Adam, Ali Khakifirooz | 2014-09-23 |
| 8841711 | Methods of increasing space for contact elements by using a sacrificial liner and the resulting device | Xiuyu Cai, Ruilong Xie, Ali Khakifirooz | 2014-09-23 |