Issued Patents All Time
Showing 2,351–2,375 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8994085 | Integrated circuit including DRAM and SRAM/logic | Veeraraghavan S. Basker, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz, Pranita Kulkarni +2 more | 2015-03-31 |
| 8987837 | Stress enhanced finFET devices | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-03-24 |
| 8987823 | Method and structure for forming a localized SOI finFET | Ali Khakifirooz, Kern Rim, Ramachandra Divakaruni | 2015-03-24 |
| 8987790 | Fin isolation in multi-gate field effect transistors | Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-03-24 |
| 8987070 | SOI device with embedded liner in box layer to limit STI recess | Balasubramanian S. Haran, Shom Ponoth | 2015-03-24 |
| 8987069 | Semiconductor substrate with multiple SiGe regions having different germanium concentrations by a single epitaxy process | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2015-03-24 |
| 8981493 | FinFET and method of fabrication | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek | 2015-03-17 |
| 8975697 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-03-10 |
| 8975675 | Locally isolated protected bulk FinFET semiconductor device | Raghavasimhan Sreenivasan | 2015-03-10 |
| 8975125 | Formation of bulk SiGe fin with dielectric isolation by anodization | Thomas N. Adam, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-03-10 |
| 8969938 | Method and structure for forming on-chip high quality capacitors with ETSOI transistors | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2015-03-03 |
| 8969966 | Defective P-N junction for backgated fully depleted silicon on insulator MOSFET | Bruce B. Doris, Laurent Grenouillet, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2015-03-03 |
| 8969934 | Gate-all-around nanowire MOSFET and method of formation | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2015-03-03 |
| 8969155 | Fin structure with varying isolation thickness | Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2015-03-03 |
| 8963259 | Device isolation in finFET CMOS | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Bruce B. Doris +1 more | 2015-02-24 |
| 8962434 | Field effect transistors with varying threshold voltages | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Thomas N. Adam | 2015-02-24 |
| 8962423 | Multilayer MIM capacitor | Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2015-02-24 |
| 8962412 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Bruce B. Doris, Ali Khakifirooz, Pranita Kerber, Christian Lavoie | 2015-02-24 |
| 8956938 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Ali Khakifirooz, Alexander Reznicek, Thomas N. Adam | 2015-02-17 |
| 8956932 | U-shaped semiconductor structure | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2015-02-17 |
| 8946793 | Integrated circuits having replacement gate structures and methods for fabricating the same | Ruilong Xie, Xiuyu Cai, Ali Khakifirooz | 2015-02-03 |
| 8946792 | Dummy fin formation by gas cluster ion beam | Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-02-03 |
| 8946010 | Three dimensional FET devices having different device widths | Bruce B. Doris, Ali Khakifirooz, Pranita Kerber | 2015-02-03 |
| 8946007 | Inverted thin channel mosfet with self-aligned expanded source/drain | Bruce B. Doris, Ali Khakifirooz, Douglas C. La Tulipe, Jr. | 2015-02-03 |
| 8940554 | Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness | Nathaniel Berliner, Toshiharu Furukawa, Douglas C. La Tulipe, Jr., William R. Tonti | 2015-01-27 |