TN

Toshiharu Nagumo

RE Renesas Electronics: 11 patents #284 of 4,529Top 7%
Globalfoundries: 5 patents #673 of 4,424Top 20%
IBM: 4 patents #21,733 of 70,183Top 35%
Toshiba Memory: 2 patents #853 of 1,971Top 45%
Overall (All Time): #344,751 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
10896913 Semiconductor memory device including memory pillars and transistor and manufacturing method thereof Takashi Fukushima, Junya Fujita 2021-01-19
10069010 Semiconductor device having compressively strained channel region and method of making same 2018-09-04
9929177 Semiconductor memory device and method for manufacturing same 2018-03-27
9589951 High-electron-mobility transistor with protective diode Takashi Hase, Kiyoshi Takeuchi, Ippei Kume 2017-03-07
9564486 Self-aligned dual-height isolation for bulk FinFET Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser +2 more 2017-02-07
9553131 Semiconductor device and forming method Kiyoshi Takeuchi, Toyoji Yamamoto 2017-01-24
9362308 Semiconductor device having finFET structures and method of making same 2016-06-07
9324790 Self-aligned dual-height isolation for bulk FinFET Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser +2 more 2016-04-26
9305846 Device isolation in FinFET CMOS Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris +1 more 2016-04-05
9231105 Semiconductor device with group-III nitride compound semiconductor layer on substrate for transistor Ippei Kume, Hiroshi Takeda, Takashi Hase 2016-01-05
9196715 Field effect transistor with channel core modified to reduce leakage current and method of fabrication Tomohiro HIRAI, Shogo Mochizuki 2015-11-24
9190411 Retrograde doped layer for device isolation Ajey Poovannummoottil Jacob, Steven Bentley, Murat Kerem Akarvardar, Jody A. Fronheiser, Kangguo Cheng +2 more 2015-11-17
9190505 Field effect transistor with channel core modified for a backgate bias and method of fabrication Tomohiro HIRAI 2015-11-17
8963259 Device isolation in finFET CMOS Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris +1 more 2015-02-24