Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
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Ruqiang Bao — 183 Patents

IBM: 176 patents #209 of 70,183Top 1%
Globalfoundries: 6 patents #578 of 4,424Top 15%
ULUlvac: 2 patents #199 of 680Top 30%
ETElpis Technologies: 1 patents #31 of 121Top 30%
Niskayuna, NY: #5 of 949 inventorsTop 1%
New York: #179 of 115,490 inventorsTop 1%
Overall (All Time): #4,094 of 4,157,543Top 1%
183 Patents All Time

Issued Patents All Time

Showing 76–100 of 183 patents

Patent #TitleCo-InventorsDate
10741401 Self-aligned semiconductor gate cut Peng Xu, Kangguo Cheng 2020-08-11
10741663 Encapsulation layer for vertical transport field-effect transistor gate stack Hemanth Jagannathan, Michael P. Belyansky 2020-08-11
10692990 Gate cut in RMG Siva Kanakasabapathy, Andrew M. Greene 2020-06-23
10692778 Gate-all-around FETs having uniform threshold voltage Dechao Guo, Junli Wang, Heng Wu 2020-06-23
10692873 Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions Takashi Ando, Pouya Hashemi, Choonghyun Lee 2020-06-23
10680083 Oxide isolated fin-type field-effect transistors Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee 2020-06-09
10679901 Differing device characteristics on a single wafer by selective etch Huimei Zhou, Shogo Mochizuki, Gen Tsutsui 2020-06-09
10679993 Vertical fin field effect transistor devices with a replacement metal gate Junli Wang, Michael P. Belyansky 2020-06-09
10672670 Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages Hemanth Jagannathan, Brent A. Anderson, Choonghyun Lee 2020-06-02
10672905 Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts Brent A. Anderson, Choonghyun Lee, Hemanth Jagannathan 2020-06-02
10672910 Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) Huimei Zhou, Michael P. Belyansky, Andrew M. Greene, Gen Tsutsui 2020-06-02
10658973 Reconfigurable allocation of VNCAP inter-layer vias for co-tuning of L and C in LC tank Zheng Xu, Hung H. Tran, Qianwen Chen 2020-05-19
10658299 Replacement metal gate processes for vertical transport field-effect transistor Choonghyun Lee, Chun Wing Yeung, Hemanth Jagannathan 2020-05-19
10658521 Enabling residue free gap fill between nanosheets Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Muthumanickam Sankarapandian, Nelson Felix 2020-05-19
10644129 Gate cut in RMG Siva Kanakasabapathy, Andrew M. Greene 2020-05-05
10629495 Low undercut N-P work function metal patterning in nanosheet replacement metal gate process Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Romain Lallement, Zhenxing Bi +1 more 2020-04-21
10622489 Vertical tunnel FET with self-aligned heterojunction Chun Wing Yeung, Choonghyun Lee, Shogo Mochizuki 2020-04-14
10615082 VFET metal gate patterning for vertical transport field effect transistor Brent A. Anderson, Kangguo Cheng, Hemanth Jagannathan, Choonghyun Lee, Junli Wang 2020-04-07
10615083 Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device Hemanth Jagannathan, Choonghyun Lee, Shogo Mochizuki 2020-04-07
10607990 Fabrication of field effect transistors with different threshold voltages through modified channel interfaces Takashi Ando, Hemanth Jagannathan, Choonghyun Lee 2020-03-31
10608121 FinFET transistor gate and epitaxy formation Zhenxing Bi, Kangguo Cheng, Zheng Xu 2020-03-31
10600884 Additive core subtractive liner for metal cut etch processes Kisup Chung, Andrew M. Greene, Sivananda K. Kanakasabapathy, David L. Rath, Indira Seshadri +1 more 2020-03-24
10586854 Gate-all-around field effect transistor having multiple threshold voltages Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega, Tenko Yamashita 2020-03-10
10586767 Hybrid BEOL metallization utilizing selective reflection mask Benjamin D. Briggs, Cornelius Brown Peethala, Michael Rizzolo, Koichi Motoyama, Gen Tsutsui +2 more 2020-03-10
10580881 Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee 2020-03-03