CW

Cory Wajda

TL Tokyo Electron Limited: 27 patents #155 of 5,567Top 3%
IBM: 7 patents #14,640 of 70,183Top 25%
📍 Albany, NY: #56 of 790 inventorsTop 8%
🗺 New York: #4,427 of 115,490 inventorsTop 4%
Overall (All Time): #134,101 of 4,157,543Top 4%
28
Patents All Time

Issued Patents All Time

Showing 1–25 of 28 patents

Patent #TitleCo-InventorsDate
12237216 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, Shihsheng Chang, Ying Trickett, Eric Chih-Fang Liu, Yun Han +5 more 2025-02-25
11700778 Method for controlling the forming voltage in resistive random access memory devices Steven P. Consiglio, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando, Paul C. Jamison +3 more 2023-07-11
11621190 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, David L. O'Meara, Nicholas Joy, Gyanaranjan Pattanaik, Robert D. Clark +3 more 2023-04-04
11024535 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, David L. O'Meara, Nicholas Joy, Gyanaranjan Pattanaik, Robert D. Clark +3 more 2021-06-01
10991881 Method for controlling the forming voltage in resistive random access memory devices Steven P. Consiglio, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando, Paul C. Jamison +3 more 2021-04-27
10950460 Method utilizing using post etch pattern encapsulation Angelique Raley, Andrew Metz, Junling Sun 2021-03-16
10700009 Ruthenium metal feature fill for interconnects Kai-Hung Yu, Nicholas Joy, Eric Chih-Fang Liu, David L. O'Meara, David S. H. Rosenthal +2 more 2020-06-30
10157784 Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization Kai-Hung Yu, Manabu Oie, Kaoru Maekawa, Gerrit J. Leusink, Yuuki Kikuchi +2 more 2018-12-18
10068764 Selective metal oxide deposition using a self-assembled monolayer surface pretreatment Kandabara Tapily, Gerrit J. Leusink, Hoyoung Kang 2018-09-04
10056328 Ruthenium metal feature fill for interconnects Kai-Hung Yu, Gerrit J. Leusink, Tadahiro Ishizaka, Takahiro Hakamata 2018-08-21
10008564 Method of corner rounding and trimming of nanowires by microwave plasma Kandabara Tapily, Ying Trickett, Chihiro TAMURA, Gerrit J. Leusink, Kaoru Maekawa 2018-06-26
9711449 Ruthenium metal feature fill for interconnects Kai-Hung Yu, Gerrit J. Leusink, Tadahiro Ishizaka, Takahiro Hakamata 2017-07-18
9607888 Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling Kai-Hung Yu, Toshio Hasegawa, Tadahiro Ishizaka, Manabu Oie, Fumitaka Amano +3 more 2017-03-28
8722548 Structures and techniques for atomic layer deposition Shintaro Aoyama, Robert D. Clark, Steven P. Consiglio, Marinus Hopstaken, Hemanth Jagannathan +4 more 2014-05-13
8460945 Method for monitoring status of system components David L. O'Meara, Daniel Craig Burdett, Stephen Cabral, Gert Leusink, John William Kostenko 2013-06-11
7964515 Method of forming high-dielectric constant films for semiconductor devices Robert D. Clark 2011-06-21
7517814 Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently Kristen Scheer, Toshihara Furakawa 2009-04-14
7501352 Method and system for forming an oxynitride layer Masanobu Igeta, David L. O'Meara, Kristen Scheer, Toshihara Eurakawa 2009-03-10
7479454 Method and processing system for monitoring status of system components David L. O'Meara, Daniel Craig Burdett, Stephen Cabral, Gert Leusink, John William Kostenko 2009-01-20
7470591 Method of forming a gate stack containing a gate dielectric layer having reduced metal content David L. O'Meara, Youngjong Lee 2008-12-30
7419702 Method for processing a substrate Kazuhito Nakamura, Enrico Mosca, Yumiko Kawano, Gert Leusink, Fenton R. McFeely +1 more 2008-09-02
7393761 Method for fabricating a semiconductor device Gert Leusink 2008-07-01
7300891 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation Igeta Masonobu, Gert Leusink 2007-11-27
7235440 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation David L. O'Meara, Anthony Dip, Michael Toeller, Toshihara Furukawa, Kristen Scheer +6 more 2007-06-26
7202186 Method of forming uniform ultra-thin oxynitride layers David L. O'Meara, Anthony Dip, Michael Toeller, Toshihara Furukawa, Kristen Scheer +6 more 2007-04-10