Issued Patents All Time
Showing 276–300 of 482 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11043492 | Self-aligned gate edge trigate and finFET devices | Szuya S. Liao, Biswajeet Guha, Christopher KENYON, Leonard P. GULER | 2021-06-22 |
| 11031487 | Contact over active gate structures for advanced integrated circuit structure fabrication | Andrew W. Yeoh, Atul MADHAVAN, Michael L. Hattendorf, Christopher P. Auth | 2021-06-08 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal +3 more | 2021-06-01 |
| 11018264 | Three-dimensional nanoribbon-based logic | Wilfred Gomes, Kinyip Phoa, Rajesh Kumar | 2021-05-25 |
| 11011550 | Self-aligned top-gated non-planar oxide semiconductor thin film transistors | Van H. Le, Abhishek A. Sharma, Gilbert Dewey, Ravi Pillarisetty, Shriram Shivaraman +1 more | 2021-05-18 |
| 11004982 | Gate for a transistor | Van H. Le, Abhishek A. Sharma, Ravi Pillarisetty, Gilbert Dewey, Shriram Shivaraman +2 more | 2021-05-11 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung +1 more | 2021-05-11 |
| 11004739 | Gate contact structure over active gate and method to fabricate same | Abhijit Jayant Pethe, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani | 2021-05-11 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung +4 more | 2021-04-20 |
| 10985267 | Fin trim isolation with single gate spacing for advanced integrated circuit structure fabrication | Byron Ho, Michael L. Hattendorf, Christopher P. Auth | 2021-04-20 |
| 10985184 | Fins for metal oxide semiconductor device structures | Martin D. Giles | 2021-04-20 |
| 10978568 | Passivation of transistor channel region interfaces | Glenn A. Glass, Mark R. Brazier, Anand S. Murthy, Owen Loh | 2021-04-13 |
| 10964697 | Non-planar semiconductor device having doped sub-fin region and method to fabricate same | Salman Latif, Chanaka D. Munasinghe | 2021-03-30 |
| 10957796 | Semiconductor device having doped epitaxial region and its methods of fabrication | Anand S. Murthy, Daniel Bourne Aubertine, Abhijit Jayant Pethe | 2021-03-23 |
| 10957769 | High-mobility field effect transistors with wide bandgap fin cladding | Sean T. Ma, Chandra S. Mohapatra, Gilbert Dewey, Willy Rachmady, Harold W. Kennel +3 more | 2021-03-23 |
| 10930679 | Thin film transistors with a crystalline oxide semiconductor source/drain | Gilbert Dewey, Abhishek A. Sharma, Shriram Shivaraman, Van H. Le, Ravi Pillarisetty | 2021-02-23 |
| 10930753 | Trench isolation for advanced integrated circuit structure fabrication | Michael L. Hattendorf, Curtis W. Ward, Heidi M. Meyer, Christopher P. Auth | 2021-02-23 |
| 10930738 | Sub-fin leakage control in semicondcutor devices | Dipanjan Basu, Seung Hoon Sung, Glenn A. Glass, Jack T. Kavalieros | 2021-02-23 |
| 10930557 | Self-aligned contacts | Mark Bohr, Nadia M. Rahhal-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more | 2021-02-23 |
| 10910265 | Gate aligned contact and method to fabricate same | Oleg Golonzka, Swaminathan Sivakumar, Charles H. Wallace | 2021-02-02 |
| 10903364 | Semiconductor device with released source and drain | Willy Rachmady, Sanaz K. Gardner, Chandra S. Mohapatra, Matthew V. Metz, Gilbert Dewey +3 more | 2021-01-26 |
| 10896963 | Semiconductor device contacts with increased contact area | Rishabh Mehandru, Szuya S. Liao | 2021-01-19 |
| 10892335 | Device isolation by fixed charge | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Justin R. Weber +5 more | 2021-01-12 |
| 10886272 | Techniques for forming dual-strain fins for co-integrated n-MOS and p-MOS devices | Stephen M. Cea, Rishabh Mehandru, Anupama Bowonder, Anand S. Murthy | 2021-01-05 |
| 10886408 | Group III-V material transistors employing nitride-based dopant diffusion barrier layer | Chandra S. Mohapatra, Harold W. Kennel, Glenn A. Glass, Willy Rachmady, Anand S. Murthy +4 more | 2021-01-05 |