Issued Patents All Time
Showing 726–750 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10224207 | Forming a contact for a tall fin transistor | Kangguo Cheng, Tenko Yamashita | 2019-03-05 |
| 10217869 | Semiconductor structure including low-K spacer material | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2019-02-26 |
| 10217846 | Vertical field effect transistor formation with critical dimension control | Steven Bentley, Min Gyu Sung, Chanro Park, Steven R. Soss, Hui Zang +8 more | 2019-02-26 |
| 10217672 | Vertical transistor devices with different effective gate lengths | Chun-Chen Yeh, Tenko Yamashita, Kangguo Cheng | 2019-02-26 |
| 10211100 | Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor | Lars Liebmann, Nigel G. Cave, Andre P. Labonte, Nicholas V. LiCausi, Guillaume Bouche +1 more | 2019-02-19 |
| 10204994 | Methods of forming a semiconductor device with a gate contact positioned above the active region | Chanro Park, Andre P. Labonte, Lars Liebmann, Nigel G. Cave, Mark V. Raymond +2 more | 2019-02-12 |
| 10199480 | Controlling self-aligned gate length in vertical transistor replacement gate flow | Tenko Yamashita, Kangguo Cheng, Chun-Chen Yeh | 2019-02-05 |
| 10199464 | Techniques for VFET top source/drain epitaxy | Kangguo Cheng, Cheng Chi, Chi-Chun Liu, Tenko Yamashita, Chun-Chen Yeh | 2019-02-05 |
| 10199271 | Self-aligned metal wire on contact structure and method for forming same | Guillaume Bouche, Laertis Economikos, Lei Sun, Guoxiang Ning, Xunyuan Zhang | 2019-02-05 |
| 10192867 | Complementary FETs with wrap around contacts and method of forming same | Julien Frougier, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley, Ali Razavieh | 2019-01-29 |
| 10192819 | Integrated circuit structure incorporating stacked field effect transistors | Daniel Chanemougame, Lars Liebmann | 2019-01-29 |
| 10186599 | Forming self-aligned contact with spacer first | Su Chen Fan, Andrew M. Greene, Sean Lian, Balasubramanian Pranatharthiharan, Mark V. Raymond | 2019-01-22 |
| 10177241 | Methods of forming a gate contact for a transistor above the active region and an air gap adjacent the gate of the transistor | Chanro Park, Hoon Kim, Min Gyu Sung | 2019-01-08 |
| 10177237 | Etch stop for airgap protection | Kangguo Cheng, Tenko Yamashita | 2019-01-08 |
| 10177041 | Fin-type field effect transistors (FINFETS) with replacement metal gates and methods | Laertis Economikos, Chanro Park, Min Gyu Sung | 2019-01-08 |
| 10170616 | Methods of forming a vertical transistor device | Steven Bentley, Jody A. Fronheiser | 2019-01-01 |
| 10170591 | Self-aligned finFET formation | Cheng Chi, Fee Li Lie, Chi-Chun Liu | 2019-01-01 |
| 10170585 | Semiconductor devices having equal thickness gate spacers | Cheng Chi | 2019-01-01 |
| 10170583 | Forming a gate contact in the active area | Kangguo Cheng, Tenko Yamashita | 2019-01-01 |
| 10170544 | Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region | Christopher M. Prindle, Min Gyu Sung, Tek Po Rinus Lee | 2019-01-01 |
| 10170520 | Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2019-01-01 |
| 10170319 | Forming a contact for a tall fin transistor | Kangguo Cheng, Tenko Yamashita | 2019-01-01 |
| 10170484 | Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method | Min Gyu Sung, Bipul C. Paul | 2019-01-01 |
| 10164104 | Method to form air-gap spacers and air-gap spacer-containing structures | Xunyuan Zhang | 2018-12-25 |
| 10164041 | Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby | Andreas Knorr, Julien Frougier, Hui Zang, Min-hwa Chi | 2018-12-25 |