RX

Ruilong Xie

IBM: 731 patents #10 of 70,183Top 1%
Globalfoundries: 577 patents #1 of 4,424Top 1%
SS Stmicroelectronics Sa: 62 patents #8 of 1,676Top 1%
GU Globalfoundries U.S.: 29 patents #17 of 665Top 3%
GP Globalfoundries Singapore Pte.: 5 patents #141 of 828Top 20%
IN Intermolecular: 1 patents #186 of 248Top 75%
📍 Niskayuna, NY: #1 of 949 inventorsTop 1%
🗺 New York: #3 of 115,490 inventorsTop 1%
Overall (All Time): #53 of 4,157,543Top 1%
1139
Patents All Time

Issued Patents All Time

Showing 701–725 of 1,139 patents

Patent #TitleCo-InventorsDate
10269920 Nanosheet transistors having thin and thick gate dielectric material Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh 2019-04-23
10269812 Forming contacts for VFETs Lars Liebmann, Daniel Chanemougame, Chanro Park, John H. Zhang, Steven Bentley +1 more 2019-04-23
10263122 Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a vertical field effect transistor Hui Zang, Tek Po Rinus Lee, Lars Liebmann 2019-04-16
10263099 Self-aligned finFET formation Cheng Chi, Fee Li Lie, Chi-Chun Liu 2019-04-16
10256304 High doped III-V source/drain junctions for field effect transistors Xiuyu Cai, Qing Liu, Kejia Wang, Chun-Chen Yeh 2019-04-09
10256158 Insulated epitaxial structures in nanosheet complementary field effect transistors Julien Frougier, Steven Bentley, Puneet Harischandra Suvarna 2019-04-09
10256231 Forming vertical transistors and metal-insulator-metal capacitors on the same chip Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh 2019-04-09
10256316 Steep-switch field effect transistor with integrated bi-stable resistive system Julien Frougier, Nicolas Loubet, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng 2019-04-09
10249728 Air-gap gate sidewall spacer and method Daniel Chanemougame, Andre P. Labonte, Lars Liebmann, Nigel G. Cave, Guillaume Bouche 2019-04-02
10249726 Methods of forming a protection layer on a semiconductor device and the resulting device Chanro Park, Xiuyu Cai 2019-04-02
10249538 Method of forming vertical field effect transistors with different gate lengths and a resulting structure Yi Qi, Hsien-Ching Lo, Jianwei Peng, Wei Hong, Yanping Shen +5 more 2019-04-02
10249535 Forming TS cut for zero or negative TS extension and resulting device Daniel Chanemougame, Lars Liebmann, Nigel G. Cave 2019-04-02
10243074 Vertical vacuum channel transistor Qing Liu, Chun-Chen Yeh 2019-03-26
10243053 Gate contact structure positioned above an active region of a transistor device Andre P. Labonte, Chanro Park 2019-03-26
10242982 Method for forming a protection device having an inner contact spacer and the resulting devices Katsunori Onishi, Tek Po Rinus Lee 2019-03-26
10236363 Vertical field-effect transistors with controlled dimensions Chun-Chen Yeh, Kangguo Cheng, Tenko Yamashita 2019-03-19
10236292 Complementary FETs with wrap around contacts and methods of forming same Julien Frougier, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley, Ali Razavieh 2019-03-19
10236291 Methods, apparatus and system for STI recess control for highly scaled finFET devices Min Gyu Sung, Chanro Park, Hoon Kim, Kwan-Yong Lim 2019-03-19
10236253 Self-aligned local interconnect technology Andrew M. Greene, Injo Ok, Balasubramanian Pranatharthiharan, Charan V. V. S. Surisetty 2019-03-19
10236218 Methods, apparatus and system for forming wrap-around contact with dual silicide Julien Frougier, Hiroaki Niimi, Nigel G. Cave, Xusheng Wu 2019-03-19
10236215 Methods of forming gate contact structures and cross-coupled contact structures for transistor devices Youngtag Woo, Daniel Chanemougame, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more 2019-03-19
10236212 Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices Balasubramanian Pranatharthiharan, Junli Wang 2019-03-19
10230000 Vertical-transport transistors with self-aligned contacts Emilie Bourjot, Daniel Chanemougame, Tek Po Rinus Lee, Hui Zang 2019-03-12
10229987 Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins Kangguo Cheng, Zuoguang Liu, Tenko Yamashita 2019-03-12
10229855 Methods of forming transistor devices with different threshold voltages and the resulting devices Hoon Kim, Min Gyu Sung, Chanro Park 2019-03-12