Issued Patents All Time
Showing 601–625 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10529826 | Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices | Julien Frougier, Chanro Park, Kangguo Cheng | 2020-01-07 |
| 10522410 | Performing concurrent diffusion break, gate and source/drain contact cut etch processes | Laertis Economikos, Hui Zang, Haiting Wang, Hong Yu | 2019-12-31 |
| 10522658 | Vertical field effect transistor having improved uniformity | Kangguo Cheng, Juntao Li, Chanro Park | 2019-12-31 |
| 10522538 | Using source/drain contact cap during gate cut | Haiting Wang, Shesh Mani Pandey, Jiehui Shu, Laertis Economikos, Hui Zang +2 more | 2019-12-31 |
| 10522403 | Middle of the line self-aligned direct pattern contacts | Jason E. Stephens, Daniel Chanemougame, Lars Liebmann, Gregory A. Northrop | 2019-12-31 |
| 10510749 | Resistor within single diffusion break, and related method | Hui Zang, Laertis Economikos, Garo Derderian | 2019-12-17 |
| 10510622 | Vertically stacked complementary-FET device with independent gate control | Julien Frougier, Puneet Harischandra Suvarna | 2019-12-17 |
| 10510620 | Work function metal patterning for N-P space between active nanostructures | Daniel Chanemougame, Steven R. Soss, Steven Bentley, Julien Frougier | 2019-12-17 |
| 10505016 | Self aligned gate shape preventing void formation | Andrew M. Greene, Qing Liu, Chun-Chen Yeh | 2019-12-10 |
| 10504798 | Gate cut in replacement metal gate process | Chanro Park, Laertis Economikos, Andrew M. Greene, Siva Kanakasabapathy, John R. Sporre | 2019-12-10 |
| 10504790 | Methods of forming conductive spacers for gate contacts and the resulting device | Lars Liebmann, Bipul C. Paul, Daniel Chanemougame, Nigel G. Cave | 2019-12-10 |
| 10497798 | Vertical field effect transistor with self-aligned contacts | Steven Bentley, Puneet Harischandra Suvarna, Chanro Park, Min Gyu Sung, Lars Liebmann +2 more | 2019-12-03 |
| 10497612 | Methods of forming contact structures on integrated circuit products | Lars Liebmann, Balasubramanian S. Pranatharthi Haran, Veeraraghavan S. Basker | 2019-12-03 |
| 10490641 | Methods of forming a gate contact structure for a transistor | Hao Tang, Cheng Chi, Daniel Chanemougame, Lars Liebmann, Mark V. Raymond | 2019-11-26 |
| 10490455 | Gate contact structures and cross-coupled contact structures for transistor devices | Youngtag Woo, Daniel Chanemougame, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more | 2019-11-26 |
| 10483363 | Methods of forming a gate contact structure above an active region of a transistor | Hao Tang, Cheng Chi, Daniel Chanemougame, Lars Liebmann, Mark V. Raymond | 2019-11-19 |
| 10475899 | Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby | Andreas Knorr, Julien Frougier, Hui Zang, Min-hwa Chi | 2019-11-12 |
| 10475660 | Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme | Cheng Chi, Fee Li Lie, Chi-Chun Liu | 2019-11-12 |
| 10468525 | VFET CMOS dual epitaxy integration | Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2019-11-05 |
| 10468300 | Contacting source and drain of a transistor device | Andre P. Labonte, Lars Liebmann, Daniel Chanemougame, Chanro Park, Nigel G. Cave +1 more | 2019-11-05 |
| 10461196 | Control of length in gate region during processing of VFET structures | Chanro Park, Steven Bentley, Min Gyu Sung | 2019-10-29 |
| 10461186 | Methods of forming vertical field effect transistors with self-aligned contacts and the resulting structures | John H. Zhang, Mahender Kumar | 2019-10-29 |
| 10461174 | Vertical field effect transistors with self aligned gate and source/drain contacts | Cheng Chi, Hao Tang | 2019-10-29 |
| 10453939 | Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drain | Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2019-10-22 |
| 10453736 | Dielectric isolation in gate-all-around devices | Robin Hsin Kuo Chao, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2019-10-22 |