Issued Patents All Time
Showing 76–100 of 117 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7153737 | Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention | Oh-Jung Kwon, Kim Bosang, Babar A. Khan, Deok-kee Kim | 2006-12-26 |
| 7118986 | STI formation in semiconductor device including SOI and bulk silicon regions | Michael D. Steigerwalt, Mahender Kumar, David M. Dobuzinsky, Johnathan E. Faltermeier, Denise Pendleton | 2006-10-10 |
| 7115965 | Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation | Mahender Kumar, Qiqing C. Ouyang, Paul A. Papworth, Christopher D. Sheraw, Michael D. Steigerwalt | 2006-10-03 |
| 7078756 | Collarless trench DRAM device | Yoichi Otani, Babar A. Khan, Paul C. Parries | 2006-07-18 |
| 7073139 | Method for determining cell body and biasing plate contact locations for embedded dram in SOI | Karen Bard | 2006-07-04 |
| 6995094 | Method for deep trench etching through a buried insulator layer | Mahender Kumar, Brian W. Messenger, Michael D. Steigerwalt | 2006-02-07 |
| 6964897 | SOI trench capacitor cell incorporating a low-leakage floating body array transistor | Karen Bard, David M. Dobuzinsky, Mahendar Kumar, Denise Pendleton, Michael D. Steigerwalt +1 more | 2005-11-15 |
| 6815749 | Backside buried strap for SOI DRAM trench capacitor | Jack A. Mandelman | 2004-11-09 |
| 6670675 | Deep trench body SOI contacts with epitaxial layer formation | S. Sundar Kumar Iyer, Babar A. Khan, Robert Hannon | 2003-12-30 |
| 6635525 | Method of making backside buried strap for SOI DRAM trench capacitor | Jack A. Mandelman | 2003-10-21 |
| 6553561 | Method for patterning a silicon-on-insulator photomask | Karen Bard | 2003-04-22 |
| 6503798 | Low resistance strap for high density trench DRAMS | Ramachandra Divakaruni, Jeffrey P. Gambino, Akira Sudo | 2003-01-07 |
| 6486043 | Method of forming dislocation filter in merged SOI and non-SOI chips | Robert Hannon, Subramanian S. Iyer, S. Sundar Kumar Iyer | 2002-11-26 |
| 6479368 | Method of manufacturing a semiconductor device having a shallow trench isolating region | Jack A. Mandelman, Mutsuo Morikado, Jeffrey P. Gambino | 2002-11-12 |
| 6429101 | Method of forming thermally stable polycrystal to single crystal electrical contact structure | Ricky S. Amos, Arne Ballantine, Gregory Bazan, Bomy Chen, Douglas D. Coolbaugh +6 more | 2002-08-06 |
| 6410399 | Process to lower strap, wordline and bitline contact resistance in trench-based DRAMS by silicidization | Philip L. Flaitz, Subramanian S. Iyer, Babar A. Khan, Paul C. Parries | 2002-06-25 |
| 6383929 | Copper vias in low-k technology | Steven H. Boettcher, Mark Hoinkis, Hyun Koo Lee, Yun-Yu Wang, Kwong Hon Wong | 2002-05-07 |
| 6348394 | Method and device for array threshold voltage control by trapped charge in trench isolation | Jack A. Mandelman, Rama Divakaruni, Giuseppe La Rosa, Yujun Li, Jochen Beintner +1 more | 2002-02-19 |
| 6340615 | Method of forming a trench capacitor DRAM cell | Sundar Iyer, Rama Divakaruni, Subramanian S. Iyer, Babar A. Khan | 2002-01-22 |
| 6319794 | Structure and method for producing low leakage isolation devices | Hiroyuki Akatsu, Tze-Chiang Chen, Laertis Economikos, Richard L. Kleinhenz, Jack A. Mandelman +1 more | 2001-11-20 |
| 6297127 | Self-aligned deep trench isolation to shallow trench isolation | Bomy Chen, Liang Han, Robert Hannon, Jay G. Harrington, Hsing-Jen Wann | 2001-10-02 |
| 6153474 | Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate | Radhika Srinivasan, Scott D. Halle, Erwin Hammerl, David M. Dobuzinsky, Jack A. Mandelman +1 more | 2000-11-28 |
| 6140208 | Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications | Farid Agahi, Gary B. Bronner, Bertrand Flietner, Erwin Hammerl, Radhika Srinivasan | 2000-10-31 |
| 6046487 | Shallow trench isolation with oxide-nitride/oxynitride liner | John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Erwin Hammerl, James F. Moseman +3 more | 2000-04-04 |
| 6015985 | Deep trench with enhanced sidewall surface area | David E. Kotecki, Carl Radens | 2000-01-18 |