Issued Patents All Time
Showing 101–117 of 117 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6014310 | High dielectric TiO.sub.2 -SiN composite films for memory applications | Gary B. Bronner, Stephan A. Cohen, David M. Dobuzinsky, Jeffrey P. Gambino, Karen P. Madden | 2000-01-11 |
| 5923971 | Reliable low resistance strap for trench storage DRAM cell using selective epitaxy | Andre R. LeBlanc, Jack A. Mandelman, Radhika Srinivasan | 1999-07-13 |
| 5899724 | Method for fabricating a titanium resistor | David M. Dobuzinsky, Stephen G. Fugardi, Erwin Hammerl, Samuel C. Ramac, Alvin W. Strong | 1999-05-04 |
| 5893735 | Three-dimensional device layout with sub-groundrule features | Reinhard Stengl, Erwin Hammerl, Jack A. Mandelman, Radhika Srinivasan, Alvin P. Short +1 more | 1999-04-13 |
| 5876788 | High dielectric TiO.sub.2 -SiN composite films for memory applications | Gary B. Bronner, Stephan A. Cohen, David M. Dobuzinsky, Jeffrey P. Gambino, Karen P. Madden | 1999-03-02 |
| 5849638 | Deep trench with enhanced sidewall surface area | David E. Kotecki, Carl Radens | 1998-12-15 |
| 5844266 | Buried strap formation in a DRAM trench capacitor | Reinhard Stengl, Erwin Hammerl, Jack A. Mandelman, Radhika Srinivasan, Alvin P. Short | 1998-12-01 |
| 5827765 | Buried-strap formation in a dram trench capacitor | Reinhard Stengl, Erwin Hammerl, Jack A. Mandelman, Radhika Srinivasan, Alvin P. Short | 1998-10-27 |
| 5792685 | Three-dimensional device layout having a trench capacitor | Erwin Hammerl, Jack A. Mandelman, Bernhard Poschenrieder, Alvin P. Short, Radhika Srinivasan +1 more | 1998-08-11 |
| 5763315 | Shallow trench isolation with oxide-nitride/oxynitride liner | John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Erwin Hammerl, James F. Moseman +3 more | 1998-06-09 |
| 5747866 | Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures | Erwin Hammerl, David M. Dobuzinsky, Herbert Palm, Stephen G. Fugardi, Atul Ajmera +2 more | 1998-05-05 |
| 5670805 | Controlled recrystallization of buried strap in a semiconductor memory device | Erwin Hammerl, Jack A. Mandelman, Junichi Shiozawa, Reinhard Stengl | 1997-09-23 |
| 5656535 | Storage node process for deep trench-based DRAM | Radhika Srinivasan, Scott D. Halle, Erwin Hammerl, David M. Dobuzinsky, Jack A. Mandelman +1 more | 1997-08-12 |
| 5643823 | Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures | Erwin Hammerl, David M. Dobuzinsky, J. Herbert Palm, Stephen G. Fugardi, Atul Ajmera +2 more | 1997-07-01 |
| 5543348 | Controlled recrystallization of buried strap in a semiconductor memory device | Erwin Hammerl, Jack A. Mandelman, Junichi Shiozawa, Reinhard Stengl | 1996-08-06 |
| 5447884 | Shallow trench isolation with thin nitride liner | Paul Fahey, Erwin Hammerl, Mutsuo Morikado | 1995-09-05 |
| 5356837 | Method of making epitaxial cobalt silicide using a thin metal underlayer | Peter J. Geiss, Thomas J. Licata, James G. Ryan | 1994-10-18 |