Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6560731 | Method for checking the functioning of memory cells of an integrated semiconductor memory | Wilfried Daehn | 2003-05-06 |
| 6153474 | Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate | Herbert L. Ho, Radhika Srinivasan, Scott D. Halle, David M. Dobuzinsky, Jack A. Mandelman +1 more | 2000-11-28 |
| 6140208 | Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications | Farid Agahi, Gary B. Bronner, Bertrand Flietner, Herbert L. Ho, Radhika Srinivasan | 2000-10-31 |
| 6046487 | Shallow trench isolation with oxide-nitride/oxynitride liner | John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Herbert L. Ho, James F. Moseman +3 more | 2000-04-04 |
| 5937292 | Nitride cap formation in a DRAM trench capacitor | Herb Lei Ho | 1999-08-10 |
| 5899724 | Method for fabricating a titanium resistor | David M. Dobuzinsky, Stephen G. Fugardi, Herbert L. Ho, Samuel C. Ramac, Alvin W. Strong | 1999-05-04 |
| 5893735 | Three-dimensional device layout with sub-groundrule features | Reinhard Stengl, Jack A. Mandelman, Herbert L. Ho, Radhika Srinivasan, Alvin P. Short +1 more | 1999-04-13 |
| 5844266 | Buried strap formation in a DRAM trench capacitor | Reinhard Stengl, Herbert L. Ho, Jack A. Mandelman, Radhika Srinivasan, Alvin P. Short | 1998-12-01 |
| 5828076 | Microelectronic component and process for its production | Harald Gossner, Ignaz Eisele, Lothar Risch | 1998-10-27 |
| 5827765 | Buried-strap formation in a dram trench capacitor | Reinhard Stengl, Herbert L. Ho, Jack A. Mandelman, Radhika Srinivasan, Alvin P. Short | 1998-10-27 |
| 5792685 | Three-dimensional device layout having a trench capacitor | Jack A. Mandelman, Bernhard Poschenrieder, Alvin P. Short, Radhika Srinivasan, Reinhard Stengl +1 more | 1998-08-11 |
| 5763315 | Shallow trench isolation with oxide-nitride/oxynitride liner | John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Herbert L. Ho, James F. Moseman +3 more | 1998-06-09 |
| 5747866 | Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures | Herbert L. Ho, David M. Dobuzinsky, Herbert Palm, Stephen G. Fugardi, Atul Ajmera +2 more | 1998-05-05 |
| 5717628 | Nitride cap formation in a DRAM trench capacitor | Herb Lei Ho | 1998-02-10 |
| 5674769 | Process for forming deep trench DRAMs with sub-groundrule gates | Johann Alsmeier, Christine Dehm, Reinhard Stengl | 1997-10-07 |
| 5670805 | Controlled recrystallization of buried strap in a semiconductor memory device | Jack A. Mandelman, Herbert L. Ho, Junichi Shiozawa, Reinhard Stengl | 1997-09-23 |
| 5656535 | Storage node process for deep trench-based DRAM | Herbert L. Ho, Radhika Srinivasan, Scott D. Halle, David M. Dobuzinsky, Jack A. Mandelman +1 more | 1997-08-12 |
| 5643823 | Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures | Herbert L. Ho, David M. Dobuzinsky, J. Herbert Palm, Stephen G. Fugardi, Atul Ajmera +2 more | 1997-07-01 |
| 5543348 | Controlled recrystallization of buried strap in a semiconductor memory device | Jack A. Mandelman, Herbert L. Ho, Junichi Shiozawa, Reinhard Stengl | 1996-08-06 |
| 5447884 | Shallow trench isolation with thin nitride liner | Paul Fahey, Herbert L. Ho, Mutsuo Morikado | 1995-09-05 |