| 6560731 |
Method for checking the functioning of memory cells of an integrated semiconductor memory |
Wilfried Daehn |
2003-05-06 |
| 6153474 |
Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate |
Herbert L. Ho, Radhika Srinivasan, Scott D. Halle, David M. Dobuzinsky, Jack A. Mandelman +1 more |
2000-11-28 |
| 6140208 |
Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications |
Farid Agahi, Gary B. Bronner, Bertrand Flietner, Herbert L. Ho, Radhika Srinivasan |
2000-10-31 |
| 6046487 |
Shallow trench isolation with oxide-nitride/oxynitride liner |
John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Herbert L. Ho, James F. Moseman +3 more |
2000-04-04 |
| 5937292 |
Nitride cap formation in a DRAM trench capacitor |
Herb Lei Ho |
1999-08-10 |
| 5899724 |
Method for fabricating a titanium resistor |
David M. Dobuzinsky, Stephen G. Fugardi, Herbert L. Ho, Samuel C. Ramac, Alvin W. Strong |
1999-05-04 |
| 5893735 |
Three-dimensional device layout with sub-groundrule features |
Reinhard Stengl, Jack A. Mandelman, Herbert L. Ho, Radhika Srinivasan, Alvin P. Short +1 more |
1999-04-13 |
| 5844266 |
Buried strap formation in a DRAM trench capacitor |
Reinhard Stengl, Herbert L. Ho, Jack A. Mandelman, Radhika Srinivasan, Alvin P. Short |
1998-12-01 |
| 5828076 |
Microelectronic component and process for its production |
Harald Gossner, Ignaz Eisele, Lothar Risch |
1998-10-27 |
| 5827765 |
Buried-strap formation in a dram trench capacitor |
Reinhard Stengl, Herbert L. Ho, Jack A. Mandelman, Radhika Srinivasan, Alvin P. Short |
1998-10-27 |
| 5792685 |
Three-dimensional device layout having a trench capacitor |
Jack A. Mandelman, Bernhard Poschenrieder, Alvin P. Short, Radhika Srinivasan, Reinhard Stengl +1 more |
1998-08-11 |
| 5763315 |
Shallow trench isolation with oxide-nitride/oxynitride liner |
John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Herbert L. Ho, James F. Moseman +3 more |
1998-06-09 |
| 5747866 |
Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures |
Herbert L. Ho, David M. Dobuzinsky, Herbert Palm, Stephen G. Fugardi, Atul Ajmera +2 more |
1998-05-05 |
| 5717628 |
Nitride cap formation in a DRAM trench capacitor |
Herb Lei Ho |
1998-02-10 |
| 5674769 |
Process for forming deep trench DRAMs with sub-groundrule gates |
Johann Alsmeier, Christine Dehm, Reinhard Stengl |
1997-10-07 |
| 5670805 |
Controlled recrystallization of buried strap in a semiconductor memory device |
Jack A. Mandelman, Herbert L. Ho, Junichi Shiozawa, Reinhard Stengl |
1997-09-23 |
| 5656535 |
Storage node process for deep trench-based DRAM |
Herbert L. Ho, Radhika Srinivasan, Scott D. Halle, David M. Dobuzinsky, Jack A. Mandelman +1 more |
1997-08-12 |
| 5643823 |
Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures |
Herbert L. Ho, David M. Dobuzinsky, J. Herbert Palm, Stephen G. Fugardi, Atul Ajmera +2 more |
1997-07-01 |
| 5543348 |
Controlled recrystallization of buried strap in a semiconductor memory device |
Jack A. Mandelman, Herbert L. Ho, Junichi Shiozawa, Reinhard Stengl |
1996-08-06 |
| 5447884 |
Shallow trench isolation with thin nitride liner |
Paul Fahey, Herbert L. Ho, Mutsuo Morikado |
1995-09-05 |
