| 7829892 |
Integrated circuit including a gate electrode |
Richard Luyken, Franz Hofmann, Dirk Manger, Wolfgang Roesner, Till Schloesser +1 more |
2010-11-09 |
|
| 7804708 |
Integrated circuit including an array of memory cells and method |
Ulrike Gruening-von Schwerin, Peter Baars, Klaus Muemmler, Stefan Tegen, Thomas Happ |
2010-09-28 |
|
| 7368752 |
DRAM memory cell |
Richard Luyken, Franz Hofmann, Dirk Manger, Wolfgang Rosner, Till Schlosser +1 more |
2008-05-06 |
$508,000 |
| 7180115 |
DRAM cell structure with tunnel barrier |
Franz Hofmann, Wolfgang Roesner, Till Schloesser |
2007-02-20 |
$312,000 |
| 6909141 |
Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component |
Wolfgang Rosner, Thomas Schulz, Thomas Äugle, Herbert Schafer, Martin Franosch |
2005-06-21 |
$64,000 |
| 6864129 |
Double gate MOSFET transistor and method for the production thereof |
Wolfgang Rosner, Thomas Schulz |
2005-03-08 |
$71,000 |
| 6614069 |
Nonvolatile semiconductor memory cell and method for fabricating the memory cell |
Wolfgang Rosner, Thomas Schulz, Ties Ramcke |
2003-09-02 |
$120,000 |
| 6600200 |
MOS transistor, method for fabricating a MOS transistor and method for fabricating two complementary MOS transistors |
Bernhard Lustig, Herbert Schafer |
2003-07-29 |
$176,000 |
| 6553157 |
Optoelectronic microelectronic system |
Thomas W. Schultz, Wolfgang Rosner |
2003-04-22 |
$80,000 |
| 6518628 |
Integrated CMOS circuit configuration, and production of same |
Wolfgang Krautschneider, Franz Hofmann |
2003-02-11 |
$173,000 |
| 6503784 |
Double gated transistor |
Gerhard Enders, Thomas Schulz, Dietrich Widmann |
2003-01-07 |
$107,000 |
| 6490190 |
Memory cell configuration, magnetic ram, and associative memory |
Ties Ramcke, Wolfgang Rosner |
2002-12-03 |
$130,000 |
| 6472767 |
Static random access memory (SRAM) |
Gerhard Enders, Thomas Schulz, Dietrich Widmann |
2002-10-29 |
$106,000 |
| 6459123 |
Double gated transistor |
Gerhard Enders, Thomas Schulz, Dietrich Widmann |
2002-10-01 |
$41,000 |
| 6442042 |
Circuit configuration having at least one nanoelectronic component and method for fabricating the component |
Ties Ramcke, Wolfgang Rosner |
2002-08-27 |
$68,000 |
| 6420228 |
Method for the production of a DRAM cell configuration |
Wolfgang Roesner, Franz Hofmann |
2002-07-16 |
$283,000 |
| 6417043 |
Memory cell configuration and fabrication method |
Wolfgang Rosner, Ties Ramcke, Hermann Jacobs |
2002-07-09 |
$364,000 |
| 6362502 |
DRAM cell circuit |
Wolfgang Rosner, Thomas Schulz, Franz Hofmann |
2002-03-26 |
$352,000 |
| 6351408 |
Memory cell configuration |
Siegfried Schwarzl |
2002-02-26 |
$565,000 |
| 6337247 |
Method of producing a vertical MOS transistor |
Thomas Schulz, Thomas Äugle, Wolfgang Rosner |
2002-01-08 |
$1,020,000 |
| 6320447 |
Circuit configuration with single-electron components, and operating method |
Wolfgang Rosner, Ties Ramcke |
2001-11-20 |
$284,000 |
| 6307422 |
Circuit configuration having single-electron components, a method for its operation and use of the method for addition of binary numbers |
Wolfgang Roesner, Ties Ramcke |
2001-10-23 |
$242,000 |
| 6300652 |
Memory cell configuration and method for its production |
Franz Hofmann, Rainer Bruchhaus, Wolfram Wersing |
2001-10-09 |
$658,000 |
| 6274431 |
Method for manufacturing an integrated circuit arrangement having at least one MOS transistor |
Wolfgang Roesner, Thomas Aeugle, Wolfgang Krautschneider |
2001-08-14 |
$136,000 |
| 6262448 |
Memory cell having trench capacitor and vertical, dual-gated transistor |
Gerhard Enders, Matthias Ilg, Dietrich Widmann |
2001-07-17 |
$516,000 |
