Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6255684 | DRAM cell configuration and method for its production | Wolfgang Roesner, Franz Hofmann | 2001-07-03 |
| 6229169 | Memory cell configuration, method for fabricating it and methods for operating it | Franz Hofmann, Wolfgang Krautschneider, Wolfgang Rosner, Till Schlosser, Paul-Werner Basse | 2001-05-08 |
| 6184045 | Method for DRAM cell arrangement and method for its production | Franz Hofman, Wolfgang Roesner, Wolfgang Krautschneider | 2001-02-06 |
| 6147376 | DRAM cell arrangement and method for its production | Franz Hofman, Wolfgang Roesner, Wolfgang Krautschneider | 2000-11-14 |
| 6066876 | Integrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layout | Wolfgang Roesner, Thomas Aeugle, Wolfgang Krautschneider | 2000-05-23 |
| 6060911 | Circuit arrangement with at least four transistors, and method for the manufacture thereof | Thomas Schulz, Thomas Aeugle, Wolfgang Roesner | 2000-05-09 |
| 6038164 | SRAM cell configuration and method for its fabrication | Thomas Schulz, Thomas Aeugle, Wolfgang Rosner | 2000-03-14 |
| 6037209 | Method for producing a DRAM cellular arrangement | Wolfgang Rosner, Franz Hofmann, Reinhard Stengl | 2000-03-14 |
| 5998261 | Method of producing a read-only storage cell arrangement | Franz Hofmann, Wolfgang Rosner, Wolfgang Krautschneider | 1999-12-07 |
| 5973373 | Read-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its production | Wolfgang Krautschneider, Franz Hofmann, Wolfgang Rosner | 1999-10-26 |
| 5959328 | Electrically programmable memory cell arrangement and method for its manufacture | Wolfgang Krautschneider, Franz Hofmann, Hans Reisinger | 1999-09-28 |
| 5920099 | Read-only memory cell array and process for manufacturing it | Wolfgang Krautschneider, Franz Hofmann | 1999-07-06 |
| 5920778 | Read-only memory cell arrangement and method for its production | Wolfgang Rosner, Wolfgang Krautschneider, Franz Hofmann | 1999-07-06 |
| 5844834 | Single-electron memory cell configuration | Wolfgang Rosner | 1998-12-01 |
| 5828076 | Microelectronic component and process for its production | Harald Gossner, Ignaz Eisele, Erwin Hammerl | 1998-10-27 |
| 5817552 | Process of making a dram cell arrangement | Wolfgang Roesner, Franz Hofman, Wolfgang Krautschneider | 1998-10-06 |
| 5744393 | Method for production of a read-only-memory cell arrangement having vertical MOS transistors | Franz Hofmann, Wolfgang Rosner, Wolfgang Krautschneider | 1998-04-28 |
| 5736761 | DRAM cell arrangement and method for its manufacture | Franz Hofmann, Wolfgang Roesner, Wolfgang Krautschneider | 1998-04-07 |
| 5710072 | Method of producing and arrangement containing self-amplifying dynamic MOS transistor memory cells | Wolfgang Krautschneider, Franz Hofmann | 1998-01-20 |
| 5559353 | Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof | Thomas Vogelsang, Franz Hofmann, Karl Robert Hofmann | 1996-09-24 |
| 5516404 | Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon | Ignaz Eisele, Harald Gossner, Hermann Baumgaertner | 1996-05-14 |
| 5443992 | Method for manufacturing an integrated circuit having at least one MOS transistor | Thomas Vogelsang, Franz Hofmann, Karl Robert Hofmann | 1995-08-22 |
| 5432115 | Process for making a contact betwen a capacitor electrode disposed in a trench and an MOS transistor source/drain region disposed outside the trench | Wolfgang Rosner, Franz Hofmann | 1995-07-11 |
| 5327374 | Arrangement with self-amplifying dynamic MOS transistor storage cells | Wolfgang Krautschneider, Klaus J. Lau | 1994-07-05 |
| 4966859 | Voltage-stable sub-.mu.m MOS transistor for VLSI circuits | Reinhard Tielert, Wolfgang Mueller, Christoph Werner | 1990-10-30 |