WK

Wolfgang Krautschneider

SA Siemens Aktiengesellschaft: 39 patents #66 of 22,248Top 1%
Infineon Technologies Ag: 11 patents #789 of 7,486Top 15%
UH Universitätsklinikum Hamburg—Eppendorf: 1 patents #15 of 67Top 25%
📍 Burlington, VT: #9 of 475 inventorsTop 2%
🗺 Vermont: #122 of 4,968 inventorsTop 3%
Overall (All Time): #52,635 of 4,157,543Top 2%
51
Patents All Time

Issued Patents All Time

Showing 1–25 of 51 patents

Patent #TitleCo-InventorsDate
10881297 In-situ sensor Udo Schumacher, Dietmar Schröder 2021-01-05
7030434 Arrangement with image sensors Heribert Geib, Franz Hofmann, Till Schlosser 2006-04-18
6593614 Integrated circuit configuration having at least one transistor and one capacitor, and method for fabricating it Franz Hofmann 2003-07-15
6576948 Integrated circuit configuration and method for manufacturing it Franz Hofmann, Till Schlosser, Josef Willer 2003-06-10
6534820 Integrated dynamic memory cell having a small area of extent, and a method for its production Franz Hofmann, Till Schlosser 2003-03-18
6521935 Mos transistor and dram cell configuration Till Schlosser, Josef Willer 2003-02-18
6518628 Integrated CMOS circuit configuration, and production of same Franz Hofmann, Lothar Risch 2003-02-11
6475866 Method for production of a memory cell arrangement Franz Hofmann, Josef Willer 2002-11-05
6445046 Memory cell arrangement and process for manufacturing the same Franz Hofmann, Josef Willer, Hans Reisinger, Paul-Werner von Basse 2002-09-03
6442065 Method for operating a memory cell configuration having dynamic gain memory cells Franz Hofmann, Till Schlosser, Josef Willer 2002-08-27
6438022 Memory cell configuration Till Schlosser, Franz Hofmann, Thomas Haneder 2002-08-20
6399433 Method for fabricating a memory cell Franz Hofmann, Till Schlosser, Josef Willer 2002-06-04
6274453 Memory cell configuration and production process therefor Till Schlosser, Franz Hofmann 2001-08-14
6274431 Method for manufacturing an integrated circuit arrangement having at least one MOS transistor Lothar Risch, Wolfgang Roesner, Thomas Aeugle 2001-08-14
6265748 Storage cell arrangement in which vertical MOS transistors have at least three different threshold voltages depending on stored data, and method of producing said arrangement Franz Hofmann, Josef Willer 2001-07-24
6229169 Memory cell configuration, method for fabricating it and methods for operating it Franz Hofmann, Wolfgang Rosner, Lothar Risch, Till Schlosser, Paul-Werner Basse 2001-05-08
6191459 Electrically programmable memory cell array, using charge carrier traps and insulation trenches Franz Hofmann, Josef Willer, Hans Reisinger 2001-02-20
6184045 Method for DRAM cell arrangement and method for its production Franz Hofman, Lothar Risch, Wolfgang Roesner 2001-02-06
6180458 Method of producing a memory cell configuration Franz Hofmann, Wolfgang Roesner 2001-01-30
6180979 Memory cell arrangement with vertical MOS transistors and the production process thereof Franz Hofmann, Josef Willer 2001-01-30
6153475 Method for the manufacturing a memory cell configuration Franz Hofmann, Josef Willer, Hans Reisinger, Paul-Werner von Basse 2000-11-28
6147376 DRAM cell arrangement and method for its production Franz Hofman, Lothar Risch, Wolfgang Roesner 2000-11-14
6125050 Configuration for driving parallel lines in a memory cell configuration Franz Hofmann, Josef Willer, Hans Reisinger, Paul-Werner Basse 2000-09-26
6066876 Integrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layout Lothar Risch, Wolfgang Roesner, Thomas Aeugle 2000-05-23
6064101 Read-only memory cell arrangement Frank Lau, Franz Hofmann 2000-05-16