Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6049105 | DRAM cell arrangement having dynamic self-amplifying memory cells, and method for manufacturing same | Franz Hofmann | 2000-04-11 |
| 6040995 | Method of operating a storage cell arrangement | Hans Reisinger, Ulrike Gruning, Hermann Wendt, Reinhard Stengl, Volker Lehmann +5 more | 2000-03-21 |
| 5998261 | Method of producing a read-only storage cell arrangement | Franz Hofmann, Wolfgang Rosner, Lothar Risch | 1999-12-07 |
| 5994746 | Memory cell configuration and method for its fabrication | Hans Reisinger, Reinhard Stengl, Franz Hofmann, Josef Willer | 1999-11-30 |
| 5990536 | Integrated circuit arrangement having at least two mutually insulated components, and method for its production | Frank Lau, Manfred Engelhardt | 1999-11-23 |
| 5977589 | DRAM cell arrangement and method for the production thereof | Till Schloesser | 1999-11-02 |
| 5973373 | Read-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its production | Lothar Risch, Franz Hofmann, Wolfgang Rosner | 1999-10-26 |
| 5959328 | Electrically programmable memory cell arrangement and method for its manufacture | Lothar Risch, Franz Hofmann, Hans Reisinger | 1999-09-28 |
| 5943572 | Electrically writable and erasable read-only memory cell arrangement and method for its production | — | 1999-08-24 |
| 5920099 | Read-only memory cell array and process for manufacturing it | Lothar Risch, Franz Hofmann | 1999-07-06 |
| 5920778 | Read-only memory cell arrangement and method for its production | Wolfgang Rosner, Franz Hofmann, Lothar Risch | 1999-07-06 |
| 5882969 | Method for manufacturing an electrically writeable and erasable read-only memory cell arrangement | Franz Hofmann, Hans Reisinger, Josef Willer | 1999-03-16 |
| 5854500 | DRAM cell array with dynamic gain memory cells | — | 1998-12-29 |
| 5854112 | Transistor isolation process | Werner M. Klingenstein | 1998-12-29 |
| 5821591 | High density read only memory cell configuration and method for its production | Franz Hofmann, Wolfgang Roesner | 1998-10-13 |
| 5817552 | Process of making a dram cell arrangement | Wolfgang Roesner, Lothar Risch, Franz Hofman | 1998-10-06 |
| 5744393 | Method for production of a read-only-memory cell arrangement having vertical MOS transistors | Lothar Risch, Franz Hofmann, Wolfgang Rosner | 1998-04-28 |
| 5736761 | DRAM cell arrangement and method for its manufacture | Lothar Risch, Franz Hofmann, Wolfgang Roesner | 1998-04-07 |
| 5710448 | Integrated polysilicon diode contact for gain memory cells | Doris Schmitt-Landsiedel, Werner M. Klingenstein | 1998-01-20 |
| 5710072 | Method of producing and arrangement containing self-amplifying dynamic MOS transistor memory cells | Lothar Risch, Franz Hofmann | 1998-01-20 |
| 5646883 | Signal sensing circuits for memory system using dynamic gain memory | Klaus J. Lau | 1997-07-08 |
| 5610540 | Low power sensor amplifier for gain memory cells | Klaus Althoff, Klaus J. Lau | 1997-03-11 |
| 5471417 | Ferroelectric memory cell arrangement | Wolfram Wersing | 1995-11-28 |
| 5333093 | Protection apparatus for series pass MOSFETS | Mike Killian | 1994-07-26 |
| 5327374 | Arrangement with self-amplifying dynamic MOS transistor storage cells | Klaus J. Lau, Lothar Risch | 1994-07-05 |