Issued Patents All Time
Showing 626–650 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7785943 | Method for forming a multi-gate device with high k dielectric for channel top surface | Oleg Gluschenkov, Ying Zhang, Huilong Zhu | 2010-08-31 |
| 7785944 | Method of making double-gated self-aligned finFET having gates of different lengths | Huilong Zhu, Xinlin Wang, Jochen Beintner, Ying Zhang, Philip J. Oldiges | 2010-08-31 |
| 7767503 | Hybrid SOI/bulk semiconductor transistors | Huilong Zhu, Philip J. Oldiges, Xinlin Wang, Oleg Gluschenkov, Huajie Chen +1 more | 2010-08-03 |
| 7749830 | CMOS (complementary metal oxide semiconductor) devices having metal gate NFETS and poly-silicon gate PFETS | William K. Henson, Richard S. Wise, Hongwen Yan | 2010-07-06 |
| 7749842 | Structures and methods for making strained MOSFETs | Huilong Zhu, Steven Bedell, Ying Zhang | 2010-07-06 |
| 7749903 | Gate patterning scheme with self aligned independent gate etch | Scott D. Halle, Matthew E. Colburn, Thomas W. Dyer | 2010-07-06 |
| 7750410 | Structure and method to improve channel mobility by gate electrode stress modification | Michael P. Belyansky, Dureseti Chidambarrao, Omer H. Dokumaci, Oleg Gluschenkov | 2010-07-06 |
| 7750418 | Introduction of metal impurity to change workfunction of conductive electrodes | Michael P. Chudzik, Supratik Guha, Rajarao Jammy, Vijay Narayanan, Vamsi K. Paruchuri +2 more | 2010-07-06 |
| 7741181 | Methods of forming mixed gate CMOS with single poly deposition | Charlotte DeWan Adams, Naim Moumen, Ying Zhang | 2010-06-22 |
| 7741166 | Oxidation method for altering a film structure | Michael P. Belyansky, Diane C. Boyd, Oleg Gluschenkov | 2010-06-22 |
| 7737014 | Reduction of boron diffusivity in pFETs | Frederick Buehrer, Dureseti Chidambarrao, Hsiang-Jen Huang, Haining Yang | 2010-06-15 |
| 7732874 | FinFET structure using differing gate dielectric materials and gate electrode materials | Huilong Zhu, Ying Zhang | 2010-06-08 |
| 7723791 | Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels | Huilong Zhu, Huajie Chen, Patricia M. Mooney, Stephen W. Bedell | 2010-05-25 |
| 7723798 | Low power circuit structure with metal gate and high-k dielectric | Eduard A. Cartier, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2010-05-25 |
| 7713807 | High-performance CMOS SOI devices on hybrid crystal-oriented substrates | Kathryn Guarini, Meikei Ieong, Shreesh Narasimha, Kern Rim, Jeffrey W. Sleight +1 more | 2010-05-11 |
| 7713806 | Structures and methods for manufacturing of dislocation free stressed channels in bulk silicon and SOI MOS devices by gate stress engineering with SiGe and/or Si:C | Huilong Zhu, Huajie Chen | 2010-05-11 |
| 7709902 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Young-Hee Kim, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2010-05-04 |
| 7696542 | Anisotropic stress generation by stress-generating liners having a sublithographic width | Lawrence A. Clevenger, Elbert E. Huang, Sampath Purushothaman, Carl Radens | 2010-04-13 |
| 7696036 | CMOS transistors with differential oxygen content high-k dielectrics | Huiming Bu, Eduard A. Cartier, Young-Hee Kim, Barry P. Linder, Vijay Narayanan +2 more | 2010-04-13 |
| 7691482 | Structure for planar SOI substrate with multiple orientations | Huilong Zhu, Meikei Ieong, Philip J. Oldiges, Min Yang | 2010-04-06 |
| 7678638 | Metal gated ultra short MOSFET devices | Jack O. Chu, Meikei Ieong, Jing Wang | 2010-03-16 |
| 7666732 | Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectrics | Young-Hee Kim, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2010-02-23 |
| 7659153 | Sectional field effect devices and method of fabrication | Ying Zhang, Thomas S. Kanarsky, Meikei Ieong, Jakub Kedzierski | 2010-02-09 |
| 7605447 | Highly manufacturable SRAM cells in substrates with hybrid crystal orientation | Gregory Costrini, Oleg Gluschenkov, Meikei Ieong, Nakgeuon Seong | 2009-10-20 |
| 7602021 | Method and structure for strained FinFET devices | Diane C. Boyd, Huilong Zhu | 2009-10-13 |