| 9818761 |
Selective oxidation for making relaxed silicon germanium on insulator structures |
Stephen W. Bedell, Effendi Leobandung, Devendra K. Sadana |
2017-11-14 |
$4,491,000 |
| 9590054 |
Low temperature spacer for advanced semiconductor devices |
Kevin K. Chan, Alfred Grill, Deborah A. Neumayer, Dae-Gyu Park, Norma E. Sosa |
2017-03-07 |
$2,625,000 |
| 9553107 |
Shallow extension junction |
Kevin K. Chan, Pouya Hashemi, Effendi Leobandung, Dae-Gyu Park |
2017-01-24 |
$6,164,000 |
| 9355887 |
Dual trench isolation for CMOS with hybrid orientations |
Victor Chan, Meikei Ieong, Rajesh Rengarajan, Alexander Reznicek, Chun-Yung Sung |
2016-05-31 |
$2,120,000 |
| 9349650 |
Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs |
Kevin K. Chan, Yue Ke, Annie Levesque, Dae-Gyu Park, Ravikumar Ramachandran +1 more |
2016-05-24 |
$1,910,000 |
| 9349649 |
Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs |
Kevin K. Chan, Yue Ke, Annie Levesque, Dae-Gyu Park, Ravikumar Ramachandran +1 more |
2016-05-24 |
$1,910,000 |
| 9318318 |
3D atomic layer gate or junction extender |
Kevin K. Chan, Pouya Hashemi, Effendi Leobandung, Dae-Gyu Park |
2016-04-19 |
$3,648,000 |
| 9306038 |
Shallow extension junction |
Kevin K. Chan, Pouya Hashemi, Effendi Leobandung, Dae-Gyu Park |
2016-04-05 |
$4,230,000 |
| 9293557 |
Low temperature spacer for advanced semiconductor devices |
Kevin K. Chan, Alfred Grill, Deborah A. Neumayer, Dae-Gyu Park, Norma E. Sosa |
2016-03-22 |
$2,974,000 |
| 9287136 |
FinFET field-effect transistors with atomic layer doping |
Kevin K. Chan, Young-Hee Kim, Isaac Lauer, Ramachandran Muralidhar, Dae-Gyu Park +1 more |
2016-03-15 |
$907,000 |
| 9275907 |
3D transistor channel mobility enhancement |
Kevin K. Chan, Dae-Gyu Park, Xinhui Wang, Yun-Yu Wang, Qi Zhang |
2016-03-01 |
$579,000 |
| 9064794 |
Integrated circuit including vertical diode |
Thomas Happ, Hsiang-Lan Lung, Bipin Rajendran |
2015-06-23 |
$4,496,000 |
| 9048261 |
Fabrication of field-effect transistors with atomic layer doping |
Kevin K. Chan, Young-Hee Kim, Isaac Lauer, Ramachandran Muralidhar, Dae-Gyu Park +1 more |
2015-06-02 |
$4,815,000 |
| 9034748 |
Process variability tolerant hard mask for replacement metal gate finFET devices |
Christopher V. Baiocco, Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung +4 more |
2015-05-19 |
$4,677,000 |
| 9023697 |
3D transistor channel mobility enhancement |
Kevin K. Chan, Dae-Gyu Park, Xinhui Wang, Yun-Yu Wang, Qi Zhang |
2015-05-05 |
$8,777,000 |
| 9006049 |
Fabricating photonics devices fully integrated into a CMOS manufacturing process |
Solomon Assefa, William M. Green, Yurii A. Vlasov |
2015-04-14 |
$3,567,000 |
| 9006048 |
Fabricating photonics devices fully integrated into a CMOS manufacturing process |
Solomon Assefa, William M. Green, Yurii A. Vlasov |
2015-04-14 |
$3,567,000 |
| 8969152 |
Field-effect transistor (FET) with source-drain contact over gate spacer |
Kevin K. Chan, Wilfried E. Haensch, Effendi Leobandung |
2015-03-03 |
$3,627,000 |
| 8859381 |
Field-effect transistor (FET) with source-drain contact over gate spacer |
Kevin K. Chan, Wilfried E. Haensch, Effendi Leobandung |
2014-10-14 |
$3,785,000 |
| 8748252 |
Replacement metal gate transistors using bi-layer hardmask |
Effendi Leobandung, William J. Cote, Laertis Economikos, Young-Hee Kim, Dae-Gyu Park +3 more |
2014-06-10 |
$4,765,000 |
| 8694586 |
Maintaining corresponding relationships between chat transcripts and related chat content |
Chang Yan Chi, Yu Hang Gao, Wen Peng Xiao |
2014-04-08 |
$7,562,000 |
| 8637844 |
Method for fabrication of crystalline diodes for resistive memories |
Bipin Rajendran, Thomas Happ, Hsiang-Lan Lung |
2014-01-28 |
$3,630,000 |
| 8633067 |
Fabricating photonics devices fully integrated into a CMOS manufacturing process |
Solomon Assefa, William M. Green, Yurii A. Vlasov |
2014-01-21 |
$5,923,000 |
| 8586960 |
Integrated circuit including vertical diode |
Thomas Happ, Hsiang-Lan Lung, Bipin Rajendran |
2013-11-19 |
$3,686,000 |
| 8445313 |
Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process |
Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung H. Lam +3 more |
2013-05-21 |
$6,083,000 |
