Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication of field-effect transistors with atomic layer doping

Fabrication of field-effect transistors with atomic layer doping

US Patent 9048261 · Granted Jun 2, 2015

Estimated economic value: $4,815,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Technique to perform neural network architecture search2025
Target qubit decoupling in an echoed cross-resonance gate2025
Calibration of two qubit gates involved in parallel operations2025
Representational disentanglement for multi-modality image completion using neura2025
Object detection using one or more neural networks2025
Pretraining framework for neural networks2025
Methods and compositions for chimeric antigen receptor targeting cancer cells2025
Tool control using multistage LSTM for predicting on-wafer measurements2025
Process for preparing aminopyrimidine derivatives2025
Graphene/nanostructure FET with self-aligned contact and gate2024
Embedded microstrip transmission line2024
Pulsed stark tones for collision mitigation2024