Issued Patents All Time
Showing 576–600 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8242560 | FinFET with thin gate dielectric layer | Eduard A. Cartier, Kangguo Cheng, Ying Zhang | 2012-08-14 |
| 8222154 | Fin and finFET formation by angled ion implantation | Kangguo Cheng, Geng Wang | 2012-07-17 |
| 8222100 | CMOS circuit with low-k spacer and stress liner | Kangguo Cheng | 2012-07-17 |
| 8215074 | Pattern formation employing self-assembled material | Charles T. Black, Timothy J. Dalton, Carl Radens | 2012-07-10 |
| 8207028 | Two-dimensional patterning employing self-assembled material | Timothy J. Dalton, Ho-Cheol Kim, Carl Radens | 2012-06-26 |
| 8207038 | Stressed Fin-FET devices with low contact resistance | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2012-06-26 |
| 8202767 | Device and method of reducing junction leakage | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2012-06-19 |
| 8187961 | Threshold adjustment for high-K gate dielectric CMOS | Eduard A. Cartier, Vijay Narayanan, Vamsi K. Paruchuri | 2012-05-29 |
| 8169024 | Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation | Kangguo Cheng, Pranita Kulkarni, Ghavam G. Shahidi | 2012-05-01 |
| 8169025 | Strained CMOS device, circuit and method of fabrication | Stephen W. Bedell, Kangguo Cheng, Ali Khakifirooz, Devendra K. Sadana, Ghavam G. Shahidi | 2012-05-01 |
| 8138543 | Hybrid FinFET/planar SOI FETs | Kangguo Cheng, Ghavam G. Shahidi | 2012-03-20 |
| 8124470 | Strained thin body semiconductor-on-insulator substrate and device | Stephen W. Bedell, Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2012-02-28 |
| 8105960 | Self-assembled sidewall spacer | Carl Radens | 2012-01-31 |
| 8105901 | Method for double pattern density | Kangguo Cheng, Toshiharu Furukawa | 2012-01-31 |
| 8097500 | Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device | Takashi Ando, Eduard A. Cartier, Changhwan Choi, Elizabeth A. Duch, Young-Hee Kim +3 more | 2012-01-17 |
| 8084309 | Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single mask | Kangguo Cheng, Ghavam G. Shahidi | 2011-12-27 |
| 8053809 | Device including high-K metal gate finfet and resistive structure and method of forming thereof | Kangguo Cheng, Ying Zhang | 2011-11-08 |
| 8035173 | CMOS transistors with differential oxygen content high-K dielectrics | Huiming Bu, Eduard A. Cartier, Young-Hee Kim, Barry P. Linder, Vijay Narayanan +2 more | 2011-10-11 |
| 8030709 | Metal gate stack and semiconductor gate stack for CMOS devices | Charlotte DeWan Adams, Philip A. Fisher, William K. Henson, Jeffrey W. Sleight | 2011-10-04 |
| 8022488 | High-performance FETs with embedded stressors | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2011-09-20 |
| 8021949 | Method and structure for forming finFETs with multiple doping regions on a same chip | Kangguo Cheng, Ying Zhang | 2011-09-20 |
| 8018005 | CMOS (complementary metal oxide semiconductor) devices having metal gate NFETs and poly-silicon gate PFETs | William K. Henson, Richard S. Wise, Hongwen Yan | 2011-09-13 |
| 8013392 | High mobility CMOS circuits | Oleg Gluschenkov, Huilong Zhu | 2011-09-06 |
| 8013367 | Structure and method for compact long-channel FETs | Carl Radens, Anthony K. Stamper | 2011-09-06 |
| 8008138 | Extremely thin semiconductor on insulator semiconductor device with suppressed dopant segregation | Kangguo Cheng, Ghavam G. Shahidi | 2011-08-30 |