Issued Patents All Time
Showing 601–625 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8008724 | Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers | Haining Yang, Huilong Zhu | 2011-08-30 |
| 8003455 | Implantation using a hardmask | Kangguo Cheng, Ying Zhang | 2011-08-23 |
| 7999323 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices | Eduard A. Cartier, Matthew W. Copel, Rajarao Jammy, Young-Hee Kim, Barry P. Linder +3 more | 2011-08-16 |
| 7993999 | High-K/metal gate CMOS finFET with improved pFET threshold voltage | Veeraraghavan S. Basker, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz | 2011-08-09 |
| 7989291 | Anisotropic stress generation by stress-generating liners having a sublithographic width | Lawrence A. Clevenger, Elbert E. Huang, Sampath Purushothaman, Carl Radens | 2011-08-02 |
| 7960790 | Self-aligned planar double-gate transistor structure | Omer H. Dokumaci, Kathryn Guarini, Suryanararyan G. Hegde, Meikei Ieong, Erin C. Jones | 2011-06-14 |
| 7935588 | Enhanced transistor performance by non-conformal stressed layers | Xiao Hu Liu | 2011-05-03 |
| 7923782 | Hybrid SOI/bulk semiconductor transistors | Huilong Zhu, Philip J. Oldiges, Xinlin Wang, Oleg Gluschenkov, Huajie Chen +1 more | 2011-04-12 |
| 7883944 | Ultra-thin semiconductor on insulator metal gate complementary field effect transistor with metal gate and method of forming thereof | Huilong Zhu, Philip J. Oldiges | 2011-02-08 |
| 7880243 | Simple low power circuit structure with metal gate and high-k dielectric | Eduard A. Cartier, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2011-02-01 |
| 7872317 | Dual metal gate self-aligned integration | Alessandro C. Callegari, Michael P. Chudzik, Vijay Narayanan, Vamsi K. Paruchuri, Michelle L. Steen | 2011-01-18 |
| 7863124 | Residue free patterned layer formation method applicable to CMOS structures | Michael P. Chudzik, William K. Henson, Hongwen Yan, Ying Zhang | 2011-01-04 |
| 7847356 | Metal gate high-K devices having a layer comprised of amorphous silicon | Tze-Chiang Chen, Vijay Narayanan, Vamsi K. Paruchuri | 2010-12-07 |
| 7847357 | High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same | Thomas W. Dyer, David R. Medeiros, Anna W. Topol | 2010-12-07 |
| 7847358 | High performance strained CMOS devices | Oleg Gluschenkov | 2010-12-07 |
| 7833849 | Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrode | Alessandro C. Callegari, Tze-Chiang Chen, Michael P. Chudzik, Young-Hee Kim, Vijay Narayanan +3 more | 2010-11-16 |
| 7833891 | Semiconductor device manufacturing method using oxygen diffusion barrier layer between buried oxide layer and high K dielectric layer | Kagguo Cheng | 2010-11-16 |
| 7820555 | Method of patterning multilayer metal gate structures for CMOS devices | Richard S. Wise, Hongwen Yan, Ying Zhang | 2010-10-26 |
| 7820552 | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack | Siva Kanakasabapathy, Ying Zhang, Edmund M. Sikorski, Hongwen Yan, Vijay Narayanan +1 more | 2010-10-26 |
| 7808020 | Self-assembled sidewall spacer | Carl Radens | 2010-10-05 |
| 7807525 | Low power circuit structure with metal gate and high-k dielectric | Eduard A. Cartier, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2010-10-05 |
| 7800152 | Methods for manufacturing a finfet using a conventional wafer and apparatus manufactured therefrom | Huilong Zhu | 2010-09-21 |
| 7790541 | Method and structure for forming multiple self-aligned gate stacks for logic devices | Mahender Kumar, Werner Rausch, Robin Van Den Nieuwenhuizen | 2010-09-07 |
| 7790592 | Method to fabricate metal gate high-k devices | Tze-Chiang Chen, Vijay Narayanan, Vamsi K. Paruchuri | 2010-09-07 |
| 7790593 | Method for tuning epitaxial growth by interfacial doping and structure including same | Katherina Babich, David R. Medeiros, Devendra K. Sadana | 2010-09-07 |