Issued Patents All Time
Showing 651–675 of 767 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7598545 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices | Eduard A. Cartier, Matthew W. Copel, Rajarao Jammy, Young-Hee Kim, Barry P. Linder +3 more | 2009-10-06 |
| 7598540 | High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same | Thomas W. Dyer, David R. Medeiros, Anna W. Topol | 2009-10-06 |
| 7569446 | Semiconductor structure and method of manufacture | Thomas W. Dyer, Haining Yang | 2009-08-04 |
| 7569848 | Mobility enhanced CMOS devices | Michael P. Belyansky, Oleg Gluschenkov | 2009-08-04 |
| 7569466 | Dual metal gate self-aligned integration | Alessandro C. Callegari, Michael P. Chudzik, Vijay Narayanan, Vamsi K. Paruchuri, Michelle L. Steen | 2009-08-04 |
| 7504693 | Dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering | Huilong Zhu, Huajie Chen | 2009-03-17 |
| 7498602 | Protecting silicon germanium sidewall with silicon for strained silicon/silicon mosfets | Huilong Zhu, Dan M. Mocuta | 2009-03-03 |
| 7494861 | Method for metal gated ultra short MOSFET devices | Jack O. Chu, Meikei Ieong, Jing Wang | 2009-02-24 |
| 7494852 | Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits | Stephen W. Bedell, Devendra K. Sadana | 2009-02-24 |
| 7488658 | Stressed semiconductor device structures having granular semiconductor material | Michael P. Belyansky, Diane C. Boyd, Dureseti Chidambarrao, Oleg Gluschenkov | 2009-02-10 |
| 7485506 | Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETS | Meikei Ieong, Edward J. Nowak, Min Yang | 2009-02-03 |
| 7482243 | Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique | Diane C. Boyd, Meikei Ieong, Devendra K. Sadana | 2009-01-27 |
| 7479688 | STI stress modification by nitrogen plasma treatment for improving performance in small width devices | Sadanand V. Deshpande, Werner Rausch, James A. Slinkman | 2009-01-20 |
| 7476580 | Structures and methods for manufacturing of dislocation free stressed channels in bulk silicon and SOI CMOS devices by gate stress engineering with SiGe and/or Si:C | Huilong Zhu, Huajie Chen | 2009-01-13 |
| 7476579 | Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film | Huilong Zhu, Jing Wang, Zhibin Ren | 2009-01-13 |
| 7470629 | Structure and method to fabricate finfet devices | Wesley C. Natzle | 2008-12-30 |
| 7459752 | Ultra thin body fully-depleted SOI MOSFETs | Meikei Ieong, Zhibin Ren, Paul M. Solomon, Min Yang | 2008-12-02 |
| 7452761 | Hybrid SOI-bulk semiconductor transistors | Huilong Zhu, Philip J. Oldiges, Xinlin Wang, Oleg Gluschenkov, Huajie Chen +1 more | 2008-11-18 |
| 7453123 | Self-aligned planar double-gate transistor structure | Omer H. Dokumaci, Kathryn Guarini, Suryanarayan G. Hegde, Meikei Ieong, Erin C. Jones | 2008-11-18 |
| 7439144 | CMOS gate structures fabricated by selective oxidation | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III | 2008-10-21 |
| 7436029 | High performance CMOS device structures and method of manufacture | Dureseti Chidambarrao, Suk Hoon Ku | 2008-10-14 |
| 7435652 | Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET | Tze-Chiang Chen, Rangarajan Jagannathan, Hongwen Yan, Qingyun Yang, Ying Zhang | 2008-10-14 |
| 7432567 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Young-Hee Kim, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2008-10-07 |
| 7425497 | Introduction of metal impurity to change workfunction of conductive electrodes | Michael P. Chudzik, Supratik Guha, Rajarao Jammy, Vijay Narayanan, Vamsi K. Paruchuri +2 more | 2008-09-16 |
| 7423303 | Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels | Huilong Zhu, Huajie Chen, Patricia M. Mooney, Stephen W. Bedell | 2008-09-09 |