| 10839133 |
Circuit layout similarity metric for semiconductor testsite coverage |
Rasit Onur Topaloglu, Dureseti Chidambarrao, Leon Stok |
2020-11-17 |
$2,639,000 |
| 10552758 |
Vertical superconducting capacitors for transmon qubits |
Jared Barney Hertzberg, Sami Rosenblatt, Rasit Onur Topaloglu |
2020-02-04 |
$2,135,000 |
| 10445651 |
Vertical superconducting capacitors for transmon qubits |
Jared Barney Hertzberg, Sami Rosenblatt, Rasit Onur Topaloglu |
2019-10-15 |
$4,653,000 |
| 10068184 |
Vertical superconducting capacitors for transmon qubits |
Jared Barney Hertzberg, Sami Rosenblatt, Rasit Onur Topaloglu |
2018-09-04 |
$2,923,000 |
| 9812394 |
Faceted structure formed by self-limiting etch |
Kangguo Cheng, Ali Khakifirooz, Juntao Li |
2017-11-07 |
$4,555,000 |
| 9437496 |
Merged source drain epitaxy |
Michael P. Chudzik, Brian J. Greene, Edward P. Maciejewski, Kevin McStay, Shreesh Narasimha +1 more |
2016-09-06 |
$2,673,000 |
| 9029862 |
Low resistance embedded strap for a trench capacitor |
Karen A. Nummy, Chengwen Pei, Geng Wang |
2015-05-12 |
$6,873,000 |
| 8680617 |
Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS |
Ying Li, Shreesh Narasimha |
2014-03-25 |
$4,381,000 |
| 8507915 |
Low resistance embedded strap for a trench capacitor |
Karen A. Nummy, Chengwen Pei, Geng Wang |
2013-08-13 |
$10,067,000 |
| 8222702 |
CMOS diodes with dual gate conductors, and methods for forming the same |
David M. Onsongo, Haining Yang |
2012-07-17 |
$11,706,000 |
| 8067805 |
Ultra shallow junction formation by epitaxial interface limited diffusion |
Huajie Chen, Omer H. Dokumaci, Oleg Gluschenkov |
2011-11-29 |
$48,840,000 |
| 8017483 |
Method of creating asymmetric field-effect-transistors |
Gregory G. Freeman, Shreesh Narasimha, Ning Su, Hasan M. Nayfeh, Nivo Rovedo +1 more |
2011-09-13 |
$4,804,000 |
| 7981751 |
Structure and method for fabricating self-aligned metal contacts |
Huilong Zhu |
2011-07-19 |
$6,687,000 |
| 7880238 |
2-T SRAM cell structure and method |
Qingqing Liang, Huilong Zhu |
2011-02-01 |
$3,711,000 |
| 7816237 |
Ultra shallow junction formation by epitaxial interface limited diffusion |
Huajie Chen, Omer H. Dokumaci, Oleg Gluschenkov |
2010-10-19 |
$3,706,000 |
| 7790541 |
Method and structure for forming multiple self-aligned gate stacks for logic devices |
Bruce B. Doris, Mahender Kumar, Robin Van Den Nieuwenhuizen |
2010-09-07 |
|
| 7737500 |
CMOS diodes with dual gate conductors, and methods for forming the same |
David M. Onsongo, Haining Yang |
2010-06-15 |
$4,416,000 |
| 7709365 |
CMOS well structure and method of forming the same |
Wilfried E. Haensch, Terence B. Hook, Louis C. Hsu, Rajiv V. Joshi |
2010-05-04 |
$4,679,000 |
| 7700425 |
Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug |
Tina Wagner, Sadanand V. Deshpande |
2010-04-20 |
$4,962,000 |
| 7645656 |
Structure and method for making strained channel field effect transistor using sacrificial spacer |
Huajie Chen, Dureseti Chidambarrao, Sang-Hyun Oh, Siddhartha Panda, Tsutomu Sato +1 more |
2010-01-12 |
$8,801,000 |
| 7615831 |
Structure and method for fabricating self-aligned metal contacts |
Huilong Zhu |
2009-11-10 |
$10,417,000 |
| 7491598 |
CMOS circuits including a passive element having a low end resistance |
Christopher D. Sheraw, Alyssa C. Bonnoit, K. Paul Muller |
2009-02-17 |
$3,763,000 |
| 7485520 |
Method of manufacturing a body-contacted finfet |
Huilong Zhu, Thomas W. Dyer, Jack A. Mandelman |
2009-02-03 |
$3,057,000 |
| 7479688 |
STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
Sadanand V. Deshpande, Bruce B. Doris, James A. Slinkman |
2009-01-20 |
$5,212,000 |
| 7402870 |
Ultra shallow junction formation by epitaxial interface limited diffusion |
Huajie Chen, Omer H. Dokumaci, Oleg Gluschenkov |
2008-07-22 |
$9,818,000 |
