Issued Patents All Time
Showing 25 most recent of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10839133 | Circuit layout similarity metric for semiconductor testsite coverage | Rasit Onur Topaloglu, Dureseti Chidambarrao, Leon Stok | 2020-11-17 |
| 10552758 | Vertical superconducting capacitors for transmon qubits | Jared Barney Hertzberg, Sami Rosenblatt, Rasit Onur Topaloglu | 2020-02-04 |
| 10445651 | Vertical superconducting capacitors for transmon qubits | Jared Barney Hertzberg, Sami Rosenblatt, Rasit Onur Topaloglu | 2019-10-15 |
| 10068184 | Vertical superconducting capacitors for transmon qubits | Jared Barney Hertzberg, Sami Rosenblatt, Rasit Onur Topaloglu | 2018-09-04 |
| 9812394 | Faceted structure formed by self-limiting etch | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2017-11-07 |
| 9437496 | Merged source drain epitaxy | Michael P. Chudzik, Brian J. Greene, Edward P. Maciejewski, Kevin McStay, Shreesh Narasimha +1 more | 2016-09-06 |
| 9029862 | Low resistance embedded strap for a trench capacitor | Karen A. Nummy, Chengwen Pei, Geng Wang | 2015-05-12 |
| 8680617 | Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS | Ying Li, Shreesh Narasimha | 2014-03-25 |
| 8507915 | Low resistance embedded strap for a trench capacitor | Karen A. Nummy, Chengwen Pei, Geng Wang | 2013-08-13 |
| 8222702 | CMOS diodes with dual gate conductors, and methods for forming the same | David M. Onsongo, Haining Yang | 2012-07-17 |
| 8067805 | Ultra shallow junction formation by epitaxial interface limited diffusion | Huajie Chen, Omer H. Dokumaci, Oleg Gluschenkov | 2011-11-29 |
| 8017483 | Method of creating asymmetric field-effect-transistors | Gregory G. Freeman, Shreesh Narasimha, Ning Su, Hasan M. Nayfeh, Nivo Rovedo +1 more | 2011-09-13 |
| 7981751 | Structure and method for fabricating self-aligned metal contacts | Huilong Zhu | 2011-07-19 |
| 7880238 | 2-T SRAM cell structure and method | Qingqing Liang, Huilong Zhu | 2011-02-01 |
| 7816237 | Ultra shallow junction formation by epitaxial interface limited diffusion | Huajie Chen, Omer H. Dokumaci, Oleg Gluschenkov | 2010-10-19 |
| 7790541 | Method and structure for forming multiple self-aligned gate stacks for logic devices | Bruce B. Doris, Mahender Kumar, Robin Van Den Nieuwenhuizen | 2010-09-07 |
| 7737500 | CMOS diodes with dual gate conductors, and methods for forming the same | David M. Onsongo, Haining Yang | 2010-06-15 |
| 7709365 | CMOS well structure and method of forming the same | Wilfried E. Haensch, Terence B. Hook, Louis C. Hsu, Rajiv V. Joshi | 2010-05-04 |
| 7700425 | Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug | Tina Wagner, Sadanand V. Deshpande | 2010-04-20 |
| 7645656 | Structure and method for making strained channel field effect transistor using sacrificial spacer | Huajie Chen, Dureseti Chidambarrao, Sang-Hyun Oh, Siddhartha Panda, Tsutomu Sato +1 more | 2010-01-12 |
| 7615831 | Structure and method for fabricating self-aligned metal contacts | Huilong Zhu | 2009-11-10 |
| 7491598 | CMOS circuits including a passive element having a low end resistance | Christopher D. Sheraw, Alyssa C. Bonnoit, K. Paul Muller | 2009-02-17 |
| 7485520 | Method of manufacturing a body-contacted finfet | Huilong Zhu, Thomas W. Dyer, Jack A. Mandelman | 2009-02-03 |
| 7479688 | STI stress modification by nitrogen plasma treatment for improving performance in small width devices | Sadanand V. Deshpande, Bruce B. Doris, James A. Slinkman | 2009-01-20 |
| 7402870 | Ultra shallow junction formation by epitaxial interface limited diffusion | Huajie Chen, Omer H. Dokumaci, Oleg Gluschenkov | 2008-07-22 |