Issued Patents All Time
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7361959 | CMOS circuits including a passive element having a low end resistance | Christopher D. Sheraw, Alyssa C. Bonnoit, K. Paul Muller | 2008-04-22 |
| 7176481 | In situ doped embedded sige extension and source/drain for enhanced PFET performance | Huajie Chen, Dureseti Chidambarrao, Siddhartha Panda, Sang-Hyun Oh, Henry K. Utomo | 2007-02-13 |
| 7163866 | SOI MOSFETS exhibiting reduced floating-body effects | Fariborz Assaderaghi, Dominic J. Schepis, Ghavam G. Shahidi | 2007-01-16 |
| 7135724 | Structure and method for making strained channel field effect transistor using sacrificial spacer | Huajie Chen, Dureseti Chidambarrao, Sang-Hyun Oh, Siddhartha Panda, Tsutomu Sato +1 more | 2006-11-14 |
| 7132323 | CMOS well structure and method of forming the same | Wilfried E. Haensch, Terence B. Hook, Louis C. Hsu, Rajiv V. Joshi | 2006-11-07 |
| 7071103 | Chemical treatment to retard diffusion in a semiconductor overlayer | Kevin K. Chan, Huajie Chen, Michael A. Gribelyuk, Judson R. Holt, Woo-Hyeong Lee +5 more | 2006-07-04 |
| 6939751 | Method and manufacture of thin silicon on insulator (SOI) with recessed channel | Huilong Zhu, Bruce B. Doris, Ying Zhang | 2005-09-06 |
| 6930030 | Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness | Tina Wagner, Sadanand V. Deshpande | 2005-08-16 |
| 6887798 | STI stress modification by nitrogen plasma treatment for improving performance in small width devices | Sadanand V. Deshpande, Bruce B. Doris, James A. Slinkman | 2005-05-03 |
| 6815282 | Silicon on insulator field effect transistor having shared body contact | William R. Dachtera, Rajiv V. Joshi | 2004-11-09 |
| 6750109 | Halo-free non-rectifying contact on chip with halo source/drain diffusion | James A. Culp, Jawahar P. Nayak, Melanie J. Sherony, Steven H. Voldman, Noah Zamdmer | 2004-06-15 |
| 6713791 | T-RAM array having a planar cell structure and method for fabricating the same | Louis L. Hsu, Rajiv V. Joshi, Fariborz Assaderaghi, Dan Moy, James A. Culp | 2004-03-30 |
| 6686629 | SOI MOSFETS exhibiting reduced floating-body effects | Fariborz Assaderaghi, Dominic J. Schepis, Ghavam G. Shahidi | 2004-02-03 |
| 6624459 | Silicon on insulator field effect transistors having shared body contact | William R. Dachtera, Rajiv V. Joshi | 2003-09-23 |
| 6521947 | Method of integrating substrate contact on SOI wafers with STI process | Atul Ajmera, Effendi Leobandung, Dominic J. Schepis, Ghavam G. Shahidi | 2003-02-18 |
| 6432777 | Method for increasing the effective well doping in a MOSFET as the gate length decreases | Ralph W. Young | 2002-08-13 |
| 6429482 | Halo-free non-rectifying contact on chip with halo source/drain diffusion | James A. Culp, Jawahar P. Nayak, Melanie J. Sherony, Steven H. Voldman, Noah Zamdmer | 2002-08-06 |
| 6337253 | Process of making buried capacitor for silicon-on-insulator structure | Bijan Davari, Effendi Leobandung, Ghavam G. Shahidi | 2002-01-08 |
| 6303450 | CMOS device structures and method of making same | Heemyong Park, Anda C. Mocuta | 2001-10-16 |
| 6188122 | Buried capacitor for silicon-on-insulator structure | Bijan Davari, Effendi Leobandung, Ghavam G. Shahidi | 2001-02-13 |
| 6022766 | Semiconductor structure incorporating thin film transistors, and methods for its manufacture | Bomy Chen, Subhash B. Kulkarni, Jerome B. Lasky, Randy W. Mann, Edward J. Nowak +1 more | 2000-02-08 |
| 5757050 | Field effect transistor having contact layer of transistor gate electrode material | Eric Adler, Subhash B. Kulkarni, Randy W. Mann, Luigi Ternullo, Jr. | 1998-05-26 |
| 5744384 | Semiconductor structures which incorporate thin film transistors | Eric Adler, Subhash B. Kulkarni, Randy W. Mann, Luigi Ternullo, Jr. | 1998-04-28 |
| 5675185 | Semiconductor structure incorporating thin film transistors with undoped cap oxide layers | Bomy Chen, Subhash B. Kulkarni, Jerome B. Lasky, Randy W. Mann, Edward J. Nowak +1 more | 1997-10-07 |
| 5670812 | Field effect transistor having contact layer of transistor gate electrode material | Eric Adler, Subhash B. Kulkarni, Randy W. Mann, Luigi Ternullo, Jr. | 1997-09-23 |