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Method to achieve increased trench depth, independent of CD as defined by lithography |
Kevin K. Chan, Gangadhara S. Mathad, Rajiv Ranade |
2006-12-05 |
| 6821864 |
Method to achieve increased trench depth, independent of CD as defined by lithography |
Kevin K. Chan, Gangadhara S. Mathad, Rajiv Ranade |
2004-11-23 |
| 6809005 |
Method to fill deep trench structures with void-free polysilicon or silicon |
Rajiv Ranade, Gangadhara S. Mathad, Kevin K. Chan |
2004-10-26 |
| 6563173 |
Silicon-on-insulator chip having an isolation barrier for reliability |
Ronald J. Bolam, Dominic J. Schepis |
2003-05-13 |
| 6492684 |
Silicon-on-insulator chip having an isolation barrier for reliability |
Ronald J. Bolam, Dominic J. Schepis |
2002-12-10 |
| 6281095 |
Process of manufacturing silicon-on-insulator chip having an isolation barrier for reliability |
Ronald J. Bolam, Dominic J. Schepis |
2001-08-28 |
| 6133610 |
Silicon-on-insulator chip having an isolation barrier for reliability and process of manufacture |
Ronald J. Bolam, Dominic J. Schepis |
2000-10-17 |
| 6022766 |
Semiconductor structure incorporating thin film transistors, and methods for its manufacture |
Bomy Chen, Jerome B. Lasky, Randy W. Mann, Edward J. Nowak, Werner Rausch +1 more |
2000-02-08 |
| 5757050 |
Field effect transistor having contact layer of transistor gate electrode material |
Eric Adler, Randy W. Mann, Werner Rausch, Luigi Ternullo, Jr. |
1998-05-26 |
| 5744384 |
Semiconductor structures which incorporate thin film transistors |
Eric Adler, Randy W. Mann, Werner Rausch, Luigi Ternullo, Jr. |
1998-04-28 |
| 5675185 |
Semiconductor structure incorporating thin film transistors with undoped cap oxide layers |
Bomy Chen, Jerome B. Lasky, Randy W. Mann, Edward J. Nowak, Werner Rausch +1 more |
1997-10-07 |
| 5670812 |
Field effect transistor having contact layer of transistor gate electrode material |
Eric Adler, Randy W. Mann, Werner Rausch, Luigi Ternullo, Jr. |
1997-09-23 |
| 5562770 |
Semiconductor manufacturing process for low dislocation defects |
Bomy Chen, Terence B. Hook |
1996-10-08 |
| 4504330 |
Optimum reduced pressure epitaxial growth process to prevent autodoping |
Arun K. Gaind, Michael R. Poponiak |
1985-03-12 |