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Home › Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug

Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug

US Patent 7700425 · Granted Apr 20, 2010

Estimated economic value: $4,962,000 ⓘ

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